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SIA537EDJ 데이터시트(PDF) 3 Page - Vishay Telefunken

부품명 SIA537EDJ
부품 상세설명  N-Channel 12 V (D-S) and P-Channel 20 V (D-S) MOSFET
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제조업체  TFUNK [Vishay Telefunken]
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SiA537EDJ
www.vishay.com
Vishay Siliconix
S13-2635-Rev. A, 30-Dec-13
3
Document Number: 62934
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width
 300 μs, duty cycle  2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Dynamic a
Input Capacitance
Ciss
N-Channel
VDS = 6 V, VGS = 0 V, f = 1 MHz
P-Channel
VDS = -10 V, VGS = 0 V, f = 1 MHz
N-Ch
-
455
-
pF
P-Ch
-
770
-
Output Capacitance
Coss
N-Ch
-
190
-
P-Ch
-
90
-
Reverse Transfer Capacitance
Crss
N-Ch
-
150
-
P-Ch
-
81
-
Total Gate Charge
Qg
VDS = 6 V, VGS = 8 V, ID = 6.8 A
N-Ch
-
10.5
16
nC
VDS = -10 V, VGS = -8 V, ID = -4.9 A
P-Ch
-
16.3
25
N-Channel
VDS = 6 V, VGS = 4.5 V, ID = 6.8 A
P-Channel
VDS = -10 V, VGS = -4.5 V, ID = -4.9 A
N-Ch
-
6.2
9.5
P-Ch
-
9.5
14.5
Gate-Source Charge
Qgs
N-Ch
-
0.8
-
P-Ch
-
1.4
-
Gate-Drain Charge
Qgd
N-Ch
-
1.6
-
P-Ch
-
2.3
-
Gate Resistance
Rg
f = 1 MHz
N-Ch
0.8
4
8
P-Ch
1
5.1
10
Turn-On Delay Time
td(on)
N-Channel
VDD = 6 V, RL = 1.1 
ID  5.4 A, VGEN = 4.5 V, Rg = 1 
P-Channel
VDD = -10 V, RL = 2.6 
ID  -3.9 A, VGEN = -4.5 V, Rg = 1 
N-Ch
-
10
15
ns
P-Ch
-
15
25
Rise Time
tr
N-Ch
-
12
20
P-Ch
-
15
25
Turn-Off Delay Time
td(off)
N-Ch
-
25
40
P-Ch
-
30
45
Fall Time
tf
N-Ch
-
12
20
P-Ch
-
10
15
Turn-On Delay Time
td(on)
N-Channel
VDD = 6 V, RL = 1.3 
ID  5.4 A, VGEN = 8 V, Rg = 1 
P-Channel
VDD = -10 V, RL = 2.6 
ID  -3.9 A, VGEN = -8 V, Rg = 1 
N-Ch
-
5
10
P-Ch
-
7
16
Rise Time
tr
N-Ch
-
10
15
P-Ch
-
12
20
Turn-Off Delay Time
td(off)
N-Ch
-
20
30
P-Ch
-
25
40
Fall Time
tf
N-Ch
-
10
15
P-Ch
-
10
15
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
TC = 25 °C
N-Ch
-
-
4.5
A
P-Ch
-
-
-4.5
Pulse Diode Forward Current a
ISM
N-Ch
-
-
20
P-Ch
-
-
-15
Body Diode Voltage
VSD
IS = 4.8 A, VGS = 0 V
N-Ch
-
0.8
1.2
V
IS = -3.9 A, VGS = 0 V
P-Ch
-
-0.9
-1.2
Body Diode Reverse Recovery Time
trr
N-Channel
IF = 5.4 A, dI/dt = 100 A/μs, TJ = 25 °C
P-Channel
IF = -3.9 A, dI/dt = -100 A/μs, TJ = 25 °C
N-Ch
-
25
50
ns
P-Ch
-
13
25
Body Diode Reverse Recovery Charge
Qrr
N-Ch
-
10
20
nC
P-Ch
-
5.5
12
Reverse Recovery Fall Time
ta
N-Ch
-
13
-
ns
P-Ch
-
7.5
-
Reverse Recovery Rise Time
tb
N-Ch
-
12
-
P-Ch
-
5.5
-
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT


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