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SIA537EDJ 데이터시트(PDF) 4 Page - Vishay Telefunken

부품명 SIA537EDJ
부품 상세설명  N-Channel 12 V (D-S) and P-Channel 20 V (D-S) MOSFET
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SIA537EDJ 데이터시트(HTML) 4 Page - Vishay Telefunken

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SiA537EDJ
www.vishay.com
Vishay Siliconix
S13-2635-Rev. A, 30-Dec-13
4
Document Number: 62934
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
N-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Gate Current vs. Gate-Source Voltage
Output Characteristics
On-Resistance vs. Drain Current and Gate Voltage
Gate Current vs. Gate-Source Voltage
Transfer Characteristics
Capacitance
VGS - Gate-to-Source Voltage (V)
0
1
2
3
4
0
3
6
9
12
15
TJ = 25 °C
0
4
8
12
16
20
0.0
0.5
1.0
1.5
2.0
2.5
3.0
VGS =5Vthru2V
VGS =1.5 V
VGS =1V
VDS - Drain-to-Source Voltage (V)
ID - Drain Current (A)
0.00
0.02
0.04
0.06
0.08
0
5
10
15
20
VGS =4.5 V
VGS =2.5 V
VGS =1.8 V
VGS - Gate-to-Source Voltage (V)
10-10
10-9
10-8
10-7
10-6
10-5
10-4
10-3
10-2
0369
12
15
TJ = 150 °C
TJ = 25 °C
0
2
4
6
8
10
0.0
0.3
0.6
0.9
1.2
1.5
TC = 25 °C
TC = 125 °C
TC = - 55 °C
VGS - Gate-to-Source Voltage (V)
0
200
400
600
800
036
9
12
Ciss
Coss
Crss
VDS - Drain-to-Source Voltage (V)


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