SI4166DY datasheet(2/10 Pages) TFUNK

부품명	SI4166DY

상세설명	N-Channel 30-V (D-S) MOSFET

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Document Number: 68953

S-82661-Rev. A, 03-Nov-08

Vishay Siliconix

Si4166DY

New Product

Notes:

a. Pulse test; pulse width

≤ 300 µs, duty cycle ≤ 2 %

b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

Static

Drain-Source Breakdown Voltage

VDS

VGS = 0 V, ID = 250 µA

30

V

VDS Temperature Coefficient

ΔV

DS/TJ

ID = 250 µA

31

mV/°C

VGS(th) Temperature Coefficient

ΔV

GS(th)/TJ

- 5.4

Gate-Source Threshold Voltage

VGS(th)

VDS = VGS , ID = 250 µA

1.2

2.4

V

Gate-Source Leakage

IGSS

VDS = 0 V, VGS = ± 20 V

± 100

nA

Zero Gate Voltage Drain Current

IDSS

VDS = 30 V, VGS = 0 V

1

µA

VDS = 30 V, VGS = 0 V, TJ = 55 °C

10

On-State Drain Currenta

ID(on)

VDS ≥ 5 V, VGS = 10 V

30

A

Drain-Source On-State Resistancea

RDS(on)

VGS = 10 V, ID = 15 A

0.0032

0.0039

Ω

VGS = 4.5 V, ID = 10 A

0.0045

0.0055

Forward Transconductancea

gfs

VDS = 15 V, ID = 15 A

65

S

Dynamicb

Input Capacitance

Ciss

VDS = 15 V, VGS = 0 V, f = 1 MHz

2730

pF

Output Capacitance

Coss

540

Reverse Transfer Capacitance

Crss

205

Total Gate Charge

Qg

VDS = 15 V, VGS = 10 V, ID = 10 A

42.5

65

nC

VDS = 15 V, VGS = 4.5 V, ID = 10 A

21.5

33

Gate-Source Charge

Qgs

6.9

Gate-Drain Charge

Qgd

7.1

Gate Resistance

Rg

f = 1 MHz

0.2

0.8

1.6

Ω

Turn-On Delay Time

td(on)

VDD = 15 V, RL = 1.5 Ω

ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω

30

50

ns

Rise Time

tr

19

35

Turn-Off Delay Time

td(off)

35

60

Fall Time

tf

15

30

Turn-On Delay Time

td(on)

VDD = 15 V, RL = 1.5 Ω

ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω

12

24

Rise Time

tr

918

Turn-Off Delay Time

td(off)

29

50

Fall Time

tf

918

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

IS

TC = 25 °C

5.9

A

Pulse Diode Forward Currenta

ISM

70

Body Diode Voltage

VSD

IS = 3 A

0.74

1.1

V

Body Diode Reverse Recovery Time

trr

IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C

28

55

ns

Body Diode Reverse Recovery Charge

Qrr

21

42

nC

Reverse Recovery Fall Time

ta

15

ns

Reverse Recovery Rise Time

tb

13

유사한 부품 번호 - SI4166DY

제조업체	부품명	데이터시트	상세설명
Vishay Siliconix	SI4166DY	141Kb / 7P	N-Channel 30-V (D-S) MOSFET Rev. A, 03-Nov-08
	SI4166DY	218Kb / 9P	N-Channel 30-V (D-S) MOSFET 01-Jan-2022
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	SI4892DY	71Kb / 4P	N-Channel 30-V (D-S) MOSFET Rev. F, 01-Aug-05
Vaishali Semiconductor	SI4356ADY	143Kb / 3P	N-Channel 30-V (D-S) MOSFET
Vishay Siliconix	SIRA00DP	513Kb / 13P	N-Channel 30 V (D-S) MOSFET Rev. A, 13-Feb-12
	SIRA04DP	513Kb / 13P	N-Channel 30 V (D-S) MOSFET Rev. A, 13-Feb-12
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SI4166DY 데이터시트(PDF) 2 Page - Vishay Telefunken

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