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SI7998DP 데이터시트(PDF) 2 Page - Vishay Telefunken |
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SI7998DP 데이터시트(HTML) 2 Page - Vishay Telefunken |
2 / 18 page Si7998DP www.vishay.com Vishay Siliconix S14-1941-Rev. C, 29-Sep-14 2 Document Number: 68970 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 μA Ch-1 30 - - V Ch-2 30 - - VDS Temperature Coefficient ΔVDS/TJ ID = 250 μA Ch-1 - 28 - mV/°C Ch-2 - 26 - VGS(th) Temperature Coefficient ΔVGS(th)/TJ ID = 250 μA Ch-1 - -5.6 - Ch-2 - -6 - Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 μA Ch-1 1.2 - 2.5 V Ch-2 1.2 - 2.5 Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V Ch-1 - - 100 nA Ch-2 - - 100 Zero Gate Voltage Drain Current IDSS VDS = 30 V, VGS = 0 V Ch-1 - - 1 μA Ch-2 - - 1 VDS = 30 V, VGS = 0 V, TJ = 85 °C Ch-1 - - 10 Ch-2 - - 10 On-State Drain Current b ID(on) VDS ≥ 5 V, VGS = 10 V Ch-1 30 - - A Ch-2 30 - - Drain-Source On-State Resistance b RDS(on) VGS = 10 V, ID = 15 A Ch-1 - 0.0076 0.0093 Ω VGS = 10 V, ID = 20 A Ch-2 - 0.0044 0.0053 VGS = 4.5 V, ID = 13 A Ch-1 - 0.0103 0.0124 VGS = 4.5 V, ID = 18 A Ch-2 - 0.0058 0.0070 Forward Transconductance b gfs VDS = 10 V, ID = 15 A Ch-1 - 45 - S VDS = 10 V, ID = 20 A Ch-2 - 71 - Dynamic a Input Capacitance Ciss Channel-1 VDS = 15 V, VGS = 0 V, f = 1 MHz Channel-2 VDS = 15 V, VGS = 0 V, f = 1 MHz Ch-1 - 1100 - pF Ch-2 - 2000 - Output Capacitance Coss Ch-1 - 200 - Ch-2 - 390 - Reverse Transfer Capacitance Crss Ch-1 - 90 - Ch-2 - 160 - Total Gate Charge Qg VDS = 15 V, VGS = 10 V, ID = 15 A Ch-1 - 17 26 nC VDS = 15 V, VGS = 10 V, ID = 20 A Ch-2 - 32 48 Channel-1 VDS = 15 V, VGS = 4.5 V, ID = 15 A Channel-2 VDS = 15 V, VGS = 4.5 V, ID = 20 A Ch-1 - 8.2 13 Ch-2 - 15.3 23 Gate-Source Charge Qgs Ch-1 - 3.2 - Ch-2 - 6.3 - Gate-Drain Charge Qgd Ch-1 - 2.7 - Ch-2 - 4.7 - Gate Resistance Rg f = 1 MHz Ch-1 - 3.5 7 W Ch-2 - 3.5 7 |
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