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1 / 10 page Vishay Siliconix Si2366DS Document Number: 67509 S11-0612-Rev. A, 04-Apr-11 www.vishay.com 1 New Product This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 N-Channel 30 V (D-S) MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converters, High Frequency Switching • Load Switch • Portable and Consumer Applications PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) a Qg (Typ.) 30 0.036 at VGS = 10 V 5.8 3.2 nC 0.042 at VGS = 4.5 V 5.4 Marking Code H6 XXX Lot Traceability and Date Code Part # Code Ordering Information: Si2366DS-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET G D S G S D Top View 2 3 SOT-23 1 (3) (2) (1) Notes: a. Based on TC = 25 °C b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s. d. Maximum under steady state conditions is 125 °C/W. ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C) TC = 25 °C ID 5.8a A TC = 70 °C 4.7 TA = 25 °C 4.5b, c TA = 70 °C 3.6b, c Pulsed Drain Current (t = 300 µs) IDM 20 Continuous Source-Drain Diode Current TC = 25 °C IS 1.75 TA = 25 °C 1.04b, c Maximum Power Dissipation TC = 25 °C PD 2.1 W TC = 70 °C 1.3 TA = 25 °C 1.25b, c TA = 70 °C 0.8b, c Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C Soldering Recommendations (Peak Temperature) 260 THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambientb, d t ≤ 5 s RthJA 80 100 °C/W Maximum Junction-to-Foot (Drain) Steady State RthJF 40 60 |
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