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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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SI4830CDY 데이터시트(PDF) 3 Page - Vishay Telefunken |
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SI4830CDY 데이터시트(HTML) 3 Page - Vishay Telefunken |
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3 / 15 page  Document Number: 68884 S09-2109-Rev. B, 12-Oct-09 www.vishay.com 3 Vishay Siliconix Si4830CDY Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ.a Max. Unit Dynamica Turn-On Delay Time td(on) Channel-1 VDD = 15 V, RL = 3 Ω ID ≅ 5 A, VGEN = 10 V, Rg = 1 Ω Channel-2 VDD = 15 V, RL = 3 Ω ID ≅ 5 A, VGEN = 10 V, Rg = 1 Ω Ch-1 9 18 ns Ch-2 10 20 Rise Time tr Ch-1 11 20 Ch-2 10 20 Turn-Off Delay Time td(off) Ch-1 18 35 Ch-2 18 35 Fall Time tf Ch-1 8 16 Ch-2 9 18 Turn-On Delay Time td(on) Channel-1 VDD = 15 V, RL = 3 Ω ID ≅ 5 A, VGEN = 4.5 V, Rg = 1 Ω Channel-2 VDD = 15 V, RL = 3 Ω ID ≅ 5 A, VGEN = 4.5 V, Rg = 1 Ω Ch-1 17 35 Ch-2 17 35 Rise Time tr Ch-1 12 24 Ch-2 12 24 Turn-Off Delay Time td(off) Ch-1 18 35 Ch-2 19 35 Fall Time tf Ch-1 10 20 Ch-2 10 20 Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS TC = 25 °C Ch-1 2.6 A Ch-2 2.6 Pulse Diode Forward Currenta ISM Ch-1 30 Ch-2 30 Body Diode Voltage VSD IS = 1 A Ch-1 0.74 1.1 V Ch-2 0.46 0.51 Body Diode Reverse Recovery Time trr Channel-1 IF = 5 A, dI/dt = 100 A/µs, TJ = 25 °C Channel-2 IF = 5 A, dI/dt = 100 A/µs, TJ = 25 °C Ch-1 17 34 ns Ch-2 17 34 Body Diode Reverse Recovery Charge Qrr Ch-1 9 18 nC Ch-2 7 14 Reverse Recovery Fall Time ta Ch-1 10 ns Ch-2 9 Reverse Recovery Rise Time tb Ch-1 7 Ch-2 8 |
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