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SIR640ADP 데이터시트(PDF) 1 Page - Vishay Telefunken

부품명 SIR640ADP
부품 상세설명  N-Channel 40 V (D-S) MOSFET
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제조업체  TFUNK [Vishay Telefunken]
홈페이지  http://www.vishay.com
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SiR640ADP
www.vishay.com
Vishay Siliconix
S15-0073-Rev. B, 26-Jan-15
1
Document Number: 62870
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
N-Channel 40 V (D-S) MOSFET
Ordering Information:
SR640ADP-T1-GE3 (lead (Pb)-free and halogen-free)
FEATURES
• TrenchFET® power MOSFET
•Low Qg for high efficiency
• 100 % Rg and UIS tested
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• Synchronous rectification
•DC/DC converter
• DC/AC inverter
Notes
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 54 °C/W.
PRODUCT SUMMARY
VDS (V)
RDS(on) (
Ω) MAX.
ID (A) a
Qg (TYP.)
40
0.0020 at VGS = 10 V
100
28.5 nC
0.0025 at VGS = 4.5 V
100
PowerPAK® SO-8 Single
Top View
1
6.15
mm
5.15
mm
Bottom View
4
G
3
S
2
S
1
S
D
8
D
6
D
7
D
5
N-Channel MOSFET
G
D
S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
VDS
40
V
Gate-Source Voltage
VGS
± 20
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C
ID
100 a
A
TC = 70 °C
100 a
TA = 25 °C
41.6 b, c
TA = 70 °C
33.3 b, c
Pulsed Drain Current (t = 100 μs)
IDM
350
Continuous Source-Drain Diode Current
TC = 25 °C
IS
94
TA = 25 °C
5.6 b, c
Single Pulse Avalanche Current
L = 0.1 mH
IAS
40
Single Pulse Avalanche Energy
EAS
80
mJ
Maximum Power Dissipation
TC = 25 °C
PD
104
W
TC = 70 °C
66.6
TA = 25 °C
6.25 b, c
TA = 70 °C
4 b, c
Operating Junction and Storage Temperature Range
TJ, Tstg
-55 to +150
°C
Soldering Recommendations (Peak Temperature) d, e
260
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYPICAL
MAXIMUM
UNIT
Maximum Junction-to-Ambient b, f
t
≤ 10 s
RthJA
15
20
°C/W
Maximum Junction-to-Case (Drain)
Steady State
RthJC
0.9
1.2


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