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SIR640ADP 데이터시트(PDF) 2 Page - Vishay Telefunken

부품명 SIR640ADP
부품 상세설명  N-Channel 40 V (D-S) MOSFET
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제조업체  TFUNK [Vishay Telefunken]
홈페이지  http://www.vishay.com
Logo TFUNK - Vishay Telefunken

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SiR640ADP
www.vishay.com
Vishay Siliconix
S15-0073-Rev. B, 26-Jan-15
2
Document Number: 62870
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
a. Pulse test; pulse width
≤ 300 μs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = 250 μA
40
-
-
V
VGS(th) Temperature Coefficient
ΔVGS(th)/TJ
ID = 250 μA
-
-4.6
-
mV/°C
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 μA
0.9
-
2
V
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
-
-
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = 40 V, VGS = 0 V
-
-
1
μA
VDS = 40 V, VGS = 0 V, TJ = 55 °C
-
-
10
On-State Drain Current a
ID(on)
VDS
≥ 5 V, VGS = 10 V
30
-
-
A
Drain-Source On-State Resistance a
RDS(on)
VGS = 10 V, ID = 20 A
-
0.00165
0.00200
Ω
VGS = 4.5 V, ID = 20 A
-
0.00205
0.00250
Forward Transconductance a
gfs
VDS = 15 V, ID = 20 A
-
82
-
S
Dynamic b
Input Capacitance
Ciss
VDS = 20 V, VGS = 0 V, f = 1 MHz
-
4240
-
pF
Output Capacitance
Coss
-
3930
-
Reverse Transfer Capacitance
Crss
-
230
-
Total Gate Charge
Qg
VDS = 20 V, VGS = 10 V, ID = 20 A
-
60
90
nC
VDS = 20 V, VGS = 4.5 V, ID = 20 A
-28.5
43
Gate-Source Charge
Qgs
-9.6
-
Gate-Drain Charge
Qgd
-5.1
-
Gate Resistance
Rg
f = 1 MHz
0.4
1.2
2
Ω
Turn-On Delay Time
td(on)
VDD = 20 V, RL = 2
Ω
ID
≅ 10 A, VGEN = 10 V, Rg = 1 Ω
-17
34
ns
Rise Time
tr
-6
12
Turn-Off Delay Time
td(off)
-44
85
Fall Time
tf
-8
16
Turn-On Delay Time
td(on)
VDD = 20 V, RL = 2
Ω
ID
≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω
-38
75
Rise Time
tr
-70
140
Turn-Off Delay Time
td(off)
-42
80
Fall Time
tf
-12
24
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
TC = 25 °C
-
-
94
A
Pulse Diode Forward Current (t = 100 μs)
ISM
--
350
Body Diode Voltage
VSD
IS = 5 A
-
0.7
1.1
V
Body Diode Reverse Recovery Time
trr
IF = 10 A, dI/dt = 100 A/μs, TJ = 25 °C
-
79
160
ns
Body Diode Reverse Recovery Charge
Qrr
-
80
160
nC
Reverse Recovery Fall Time
ta
-22
-
ns
Reverse Recovery Rise Time
tb
-57
-


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