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SIR640ADP 데이터시트(PDF) 4 Page - Vishay Telefunken |
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SIR640ADP 데이터시트(HTML) 4 Page - Vishay Telefunken |
4 / 13 page SiR640ADP www.vishay.com Vishay Siliconix S15-0073-Rev. B, 26-Jan-15 4 Document Number: 62870 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Source-Drain Diode Forward Voltage Threshold Voltage On-Resistance vs. Gate-to-Source Voltage Single Pulse Power, Junction-to-Ambient Safe Operating Area, Junction-to-Ambient 0.001 0.01 0.1 1 10 100 0.0 0.2 0.4 0.6 0.8 1.0 1.2 V SD - Source-to-Drain Voltage (V) T J = 150 °C T J = 25 °C - 1.0 - 0.7 - 0.4 - 0.1 0.2 0.5 - 50 - 25 0 25 50 75 100 125 150 T J - Temperature (°C) I D = 250 μA I D = 5 mA 0.000 0.003 0.006 0.009 0.012 0.015 0 2 4 6 8 10 V GS - Gate-to-Source Voltage (V) T J = 125 °C T J = 25 °C I D = 20 A 0 40 80 120 160 200 0.001 0.01 0.1 1 10 Time (s) 0.01 0.1 1 10 100 1000 0.01 0.1 1 10 100 V DS - Drain-to-Source Voltage (V) * V GS > minimum VGS at which RDS(on) is specified 100 us 100 ms Limited by R DS(on)* 1 ms I DM Limited T A = 25 °C Single Pulse BVDSS Limited 10 ms 10 s 1 s DC I D Limited |
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