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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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MTV20N50E 데이터시트(PDF) 1 Page - ON Semiconductor |
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MTV20N50E 데이터시트(HTML) 1 Page - ON Semiconductor |
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1 / 11 page  © Semiconductor Components Industries, LLC, 2006 August, 2006 − Rev. 1 1 Publication Order Number: MTV20N50E/D MTV20N50E Designer’s™ Data Sheet TMOS E−FET.™ Power Field Effect Transistor D3PAK for Surface Mount N−Channel Enhancement−Mode Silicon Gate The D3PAK package has the capability of housing the largest chip size of any standard, plastic, surface mount power semiconductor. This allows it to be used in applications that require surface mount components with higher power and lower RDS(on) capabilities. This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading performance over time. In addition, this advanced TMOS E−FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for high voltage, high speed switching applications in surface mount PWM motor controls and both ac−dc and dc−dc power supplies. These devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. • Robust High Voltage Termination • Avalanche Energy Specified • Source−to−Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode • Diode is Characterized for Use in Bridge Circuits • IDSS and VDS(on) Specified at Elevated Temperature • Short Heatsink Tab Manufactured − Not Sheared • Specifically Designed Leadframe for Maximum Power Dissipation • Available in 24 mm, 13−inch/500 Unit Tape & Reel, Add −RL Suffix to Part Number http://onsemi.com TMOS POWER FET 20 AMPERES, 500 VOLTS RDS(on) = 0.240 W D3PAK Surface Mount CASE 433−01 Style 2 ® D S G N−Channel |
유사한 부품 번호 - MTV20N50E |
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유사한 설명 - MTV20N50E |
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