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1N6816 데이터시트(PDF) 2 Page - Microsemi Corporation

부품명 1N6816
상세설명  LOW LEAKAGE SCHOTTKY DIODE
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제조업체  MICROSEMI [Microsemi Corporation]
홈페이지  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

1N6816 데이터시트(HTML) 2 Page - Microsemi Corporation

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DESCRIPTION
SYMBOL
CONDITIONS
MIN
TYP.
MAX
UNIT
Reverse (Leakage)
IR25
VR= 45 Vdc, Tc= 25
°C
5
300
µA
Current
IR125
VR= 45 Vdc, Tc= 125
°C
1.5
10
mA
Forward Voltage
VF1
IF= 5A, Tc= 25
°C
540
600
mV
pulse test,
VF2
IF= 10A, Tc= 25
°C
590
675
mV
pw= 300
µs
VF3
IF= 20A, Tc= 25
°C
680
775
mV
d/c
≤2%
VF4
IF= 50A, Tc= 25
°C
850
-
mV
VF5
IF= 10A, Tc= -55
°C
680
775
mV
VF6
IF= 10A, Tc= 125
°C
500
-
mV
Junction Capacitance
Cj1
VR= 10 Vdc
525
600
pF
Cj2
VR= 5 Vdc
725
pF
Breakdown Voltage
BVR
IR= 1 mA, Tc= 25
°C
55
V
IR= 1 mA, Tc= -55
°C
45
50
V
Electrical Parameters
MSASC25W45K (1N6816)
MSASC25W45KR (1N6816R)
Datasheet# MSC1033A


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