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BCX70GLT1 데이터시트(PDF) 2 Page - ON Semiconductor

부품명 BCX70GLT1
상세설명  General Purpose Transistors
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제조업체  ONSEMI [ON Semiconductor]
홈페이지  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

BCX70GLT1 데이터시트(HTML) 2 Page - ON Semiconductor

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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
ON CHARACTERISTICS
DC Current Gain
(IC = 10 mAdc, VCE = 5.0 Vdc)
BCX70G
BCX70J
BCX70K
(IC = 2.0 mAdc, VCE = 5.0 Vdc)
BCX70G
BCX70J
BCX70K
(IC = 50 mAdc, VCE = 1.0 Vdc)
BCX70G
BCX70J
BCX70K
hFE
40
100
120
250
380
60
90
100
220
460
630
Collector−Emitter Saturation Voltage
(IC = 50 mAdc, IB = 1.25 mAdc)
(IC = 10 mAdc, IB = 0.25 mAdc)
VCE(sat)
0.55
0.35
Vdc
Base −Emitter Saturation Voltage
(IC = 50 mAdc, IB = 1.25 mAdc)
(IC = 50 mAdc, IB = 0.25 mAdc)
VBE(sat)
0.7
0.6
1.05
0.85
Vdc
Base −Emitter On Voltage
(IC = 2.0 mAdc, VCE = 5.0 Vdc)
VBE(on)
0.55
0.75
Vdc
SMALL−SIGNAL CHARACTERISTICS
Current−Gain — Bandwidth Product
(IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz)
fT
125
MHz
Output Capacitance
(VCB = 10 Vdc, IC = 0, f = 1.0 MHz)
Cobo
4.5
pF
Small−Signal Current Gain
(IC = 2.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz)
BCX70G
BCX70J
BCX70K
hfe
125
250
350
250
500
700
Noise Figure
(IC = 0.2 mAdc, VCE = 5.0 Vdc, RS = 2.0 kΩ, f = 1.0 kHz, BW = 200 Hz)
NF
6.0
dB
SWITCHING CHARACTERISTICS
Turn−On Time
(IC = 10 mAdc, IB1 = 1.0 mAdc)
ton
150
ns
Turn−Off Time
(IB2 = 1.0 mAdc, VBB = 3.6 Vdc, R1 = R2 = 5.0 kΩ, RL = 990Ω)
toff
800
ns
Figure 1. Turn−On Time
Figure 2. Turn−Off Time
EQUIVALENT SWITCHING TIME TEST CIRCUITS
*Total shunt capacitance of test jig and connectors
10 k
+3.0 V
275
CS < 4.0 pF*
10 k
+3.0 V
275
CS < 4.0 pF*
1N916
300 ns
DUTY CYCLE = 2%
+10.9 V
−0.5 V
<1.0 ns
10 < t1 < 500 μs
DUTY CYCLE = 2%
+10.9 V
0
−9.1 V
< 1.0 ns
t1


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