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SB3N551DG 데이터시트(PDF) 3 Page - ON Semiconductor |
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SB3N551DG 데이터시트(HTML) 3 Page - ON Semiconductor |
3 / 6 page SB3N551 http://onsemi.com 3 Table 3. MAXIMUM RATINGS Symbol Parameter Condition 1 Condition 2 Rating Units VDD Positive Power Supply GND = 0 V − 7.0 V VI/VO Input/Output Voltage t ≤ 1.5 ns − GND–1.5 ≤ VI/VO ≤ VDD+1.5 V TA Operating Temperature Range, Industrial − − ≥ −40 to ≤ +85 °C Tstg Storage Temperature Range − − −65 to +150 °C qJA Thermal Resistance (Junction−to−Ambient) 0 lfpm 500 lfpm SOIC−8 190 130 °C/W °C/W qJC Thermal Resistance (Junction−to−Case) (Note 1) SOIC−8 41 to 44 °C/W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. JEDEC standard multilayer board − 2S2P (2 signal, 2 power) Table 4. ATTRIBUTES Characteristic Value ESD Protection Human Body Model Machine Model > 4 kV > 200 V Moisture Sensitivity, Indefinite Time Out of Drypack (Note 2) Level 1 Flammability Rating Oxygen Index: 28 to 34 UL−94 code V−0 @ 0.125 in Transistor Count 531 Devices Meets or Exceeds JEDEC Standard EIA/JESD78 IC Latchup Test 2. For additional Moisture Sensitivity information, refer to Application Note AND8003/D. |
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