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DAC8812 데이터시트(PDF) 4 Page - Texas Instruments

부품명 DAC8812
상세설명  DAC8812 Dual, Serial-Input 16-Bit Multiplying Digital-to-Analog Converter
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제조업체  TI [Texas Instruments]
홈페이지  http://www.ti.com
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DAC8812 데이터시트(HTML) 4 Page - Texas Instruments

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DAC8812
SBAS349C – AUGUST 2005 – REVISED NOVEMBER 2015
www.ti.com
7 Specifications
7.1 Absolute Maximum Ratings
over operating ambient temperature range (unless otherwise noted)
(1)
MIN
MAX
UNIT
VDD to GND
–0.3
7
V
VREFx, RFBx to GND
–18
18
V
Digital logic inputs to GND
–0.3
VDD + 0.3
V
IOUTx to GND
–0.3
VDD + 0.3
V
AGNDx to DGND
–0.3
0.3
V
Input current to any pin except supplies
–50
50
mA
(150°C – TA) /
Package power dissipation
W
RθJA
Maximum junction temperature (TJmax)
150
°C
Operating temperature range
–40
85
°C
Storage temperature, Tstg
–65
150
°C
(1)
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
7.2 ESD Ratings
VALUE
UNIT
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)
±4000
V(ESD)
Electrostatic discharge
V
Charged-device model (CDM), per JEDEC specification JESD22-
±1000
C101(2)
(1)
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. Pins listed as ±4000
V may actually have higher performance.
(2)
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. Pins listed as ±1000
V may actually have higher performance.
7.3 Recommended Operating Conditions
over operating ambient temperature range (unless otherwise noted)
MIN
NOM
MAX
UNIT
VDD
Supply voltage to GND
2.7
5.5
V
TA
Operating ambient temperature
–40
125
°C
7.4 Thermal Information
DAC8812
THERMAL METRIC(1)
PW (TSSOP)
UNIT
16 PINS
RθJA
Junction-to-ambient thermal resistance
100.6
°C/W
RθJC(top)
Junction-to-case (top) thermal resistance
32.8
°C/W
RθJB
Junction-to-board thermal resistance
46.8
°C/W
ψJT
Junction-to-top characterization parameter
2
°C/W
ψJB
Junction-to-board characterization parameter
46
°C/W
(1)
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report, SPRA953.
4
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Copyright © 2005–2015, Texas Instruments Incorporated
Product Folder Links: DAC8812


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