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LF411-N 데이터시트(PDF) 5 Page - Texas Instruments

부품명 LF411-N
상세설명  Low Offset, Low Drift JFET Input Operational Amplifier
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LF411-N 데이터시트(HTML) 5 Page - Texas Instruments

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LF411-N
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SNOSBH6E – APRIL 1998 – REVISED OCTOBER 2014
6.5 DC Electrical Characteristics
(1) (2)
LF411A
LF411
PARAMETER
TEST CONDITIONS
UNIT
MIN
TYP
MAX
MIN
TYP
MAX
VOS
Input Offset Voltage
RS=10 kΩ, TA=25°C
0.3
0.5
0.8
2.0
mV
ΔVOS/ΔT
Average TC of Input
RS=10 kΩ
7
7
μV/°C
Offset Voltage
IOS
Input Offset Current
VS=±15V
(2) (3)
Tj=25°C
25
100
25
100
pA
Tj=70°C
2
2
nA
Tj=125°C
25
25
nA
IB
Input Bias Current
VS=±15V
(2) (3)
Tj=25°C
50
200
50
200
pA
Tj=70°C
4
4
nA
Tj=125°C
50
50
nA
RIN
Input Resistance
Tj=25°C
1012
1012
Ω
AVOL
Large Signal Voltage Gain
VS=±15V, VO=±10V, RL=2k,
50
200
25
200
V/mV
TA=25°C
Over Temperature
25
200
15
200
V/mV
VO
Output Voltage Swing
VS=±15V, RL=10k
±12
±13.5
±12
±13.5
V
VCM
Input Common-Mode
±16
+19.5
±11
+14.5
V
Voltage Range
−16.5
−11.5
V
CMRR
Common-Mode Rejection
RS≤10k
80
100
70
100
dB
Ratio
PSRR
Supply Voltage Rejection
See (4)
80
100
70
100
dB
Ratio
IS
Supply Current
1.8
2.8
1.8
3.4
mA
(1)
RETS 411X for LF411MH and LF411MJ military specifications.
(2)
Unless otherwise specified, the specifications apply over the full temperature range and for VS=±20V for the LF411A and for VS=±15V
for the LF411. VOS, IB, and IOS are measured at VCM=0.
(3)
The input bias currents are junction leakage currents which approximately double for every 10°C increase in the junction temperature,
Tj. Due to limited production test time, the input bias currents measured are correlated to junction temperature. In normal operation the
junction temperature rises above the ambient temperature as a result of internal power dissipation, PD. Tj=TAjA PD where θjA is the
thermal resistance from junction to ambient. Use of a heat sink is recommended if input bias current is to be kept to a minimum.
(4)
Supply voltage rejection ratio is measured for both supply magnitudes increasing or decreasing simultaneously in accordance with
common practice, from ±15V to ±5V for the LF411 and from ±20V to ±5V for the LF411A.
6.6 AC Electrical Characteristics
LF411A
LF411
PARAMETER(1)(2)
TEST CONDITIONS
UNIT
MIN
TYP
MAX
MIN
TYP
MAX
SR
Slew Rate
VS=±15V, TA=25°C
10
15
8
15
V/
μs
GBW
Gain-Bandwidth Product
VS=±15V, TA=25°C
3
4
2.7
4
MHz
en
Equivalent Input Noise Voltage
TA=25°C, RS=100Ω,
25
25
nV /
√Hz
f=1 kHz
in
Equivalent Input Noise Current
TA=25°C, f=1 kHz
0.01
0.01
pA /
√Hz
THD
Total Harmonic Distortion
AV=+10, RL=10k, VO=20
<0.02
<0.02
Vp-p, BW=20 Hz
−20 kHz
%
%
(1)
Unless otherwise specified, the specifications apply over the full temperature range and for VS=±20V for the LF411A and for VS=±15V
for the LF411. VOS, IB, and IOS are measured at VCM=0.
(2)
RETS 411X for LF411MH and LF411MJ military specifications.
Copyright © 1998–2014, Texas Instruments Incorporated
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