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MC74VHCT50A 데이터시트(PDF) 3 Page - ON Semiconductor |
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3 / 8 page MC74VHCT50A http://onsemi.com 3 DC ELECTRICAL CHARACTERISTICS VCC TA = 25°C TA ≤ 85°C TA ≤ 125°C Symbol Parameter Test Conditions (V) Min Typ Max Min Max Min Max Unit VIH Minimum High–Level Input Voltage 4.5 5.5 2.0 2.0 2.0 2.0 2.0 2.0 V VIL Maximum Low–Level Input Voltage 4.5 5.5 0.8 0.8 0.8 0.8 0.8 0.8 V VOH Minimum High–Level Output Voltage VIN = VIH or VIL IOH = –50 µA 4.5 4.4 4.5 4.4 4.4 V Ou u o age VIN = VIH or VIL VIN = VIH or VIL IOH = –8 mA 4.5 3.94 3.80 3.66 V VOL Maximum Low–Level Output Voltage VIN = VIH or VIL IOL = 50 µA 4.5 0.0 0.1 0.1 0.1 V Ou u o age VIN = VIH or VIL VIN = VIH or VIL IOL = 8 mA 4.5 0.36 0.44 0.52 V IIN Maximum Input Leakage Current VIN = 5.5 V or GND 0 to 5.5 ±0.1 ±1.0 ±1.0 µA ICC Maximum Quiescent Supply Current VIN = VCC or GND 5.5 2.0 20 40 µA ICCT Quiescent Supply Current Input: VIN = 3.4 V 5.5 1.35 1.50 1.65 mA IOFF Output Leakage Current VOUT = 5.5 V 0.0 0.5 5.0 10 µA AC ELECTRICAL CHARACTERISTICS (Cload = 50 pF, Input tr = tf = 3.0ns) TA = 25°C TA ≤ 85°C TA ≤ 125°C Symbol Parameter Test Conditions Min Typ Max Min Max Min Max Unit tPLH, tPHL Maximum Propogation Delay, Input A to Y VCC = 5.0 ± 0.5 V CL = 15 pF CL = 50 pF 4.7 5.5 6.7 7.7 7.5 8.5 8.5 9.5 ns CIN Maximum Input Capacitance 5 10 10 10 pF Typical @ 25 °C, VCC = 5.0 V CPD Power Dissipation Capacitance (Note 6) 15 pF 6. CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load. Average operating current can be obtained by the equation: ICC(OPR) = CPD VCC fin + ICC. CPD is used to determine the no–load dynamic power consumption; PD = CPD VCC2 fin + ICC VCC. NOISE CHARACTERISTICS (Input tr = tf = 3.0ns, CL = 50pF, VCC = 5.0V) TA = 25°C Symbol Characteristic Typ Max Unit VOLP Quiet Output Maximum Dynamic VOL 0.8 1.0 V VOLV Quiet Output Minimum Dynamic VOL –0.8 –1.0 V VIHD Minimum High Level Dynamic Input Voltage 2.0 V VILD Maximum Low Level Dynamic Input Voltage 0.8 V |
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