FDD10N20LZ datasheet(3/8 Pages) FAIRCHILD

부품명	FDD10N20LZ

상세설명	Uninterruptible Power Supply

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제조업체	FAIRCHILD [Fairchild Semiconductor]

홈페이지	http://www.fairchildsemi.com

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3 / 8 page

FDD10N20LZ Rev. C1

www.fairchildsemi.com

3

Typical Performance Characteristics

Figure 1. On-Region Characteristics

Figure 2. Transfer Characteristics

Figure 3. On-Resistance Variation vs.

Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage

Variation vs. Source Current

and Temperature

Figure 5. Capacitance Characteristics

Figure 6. Gate Charge Characteristics

0.1

1

10

0.1

1

10

20

*Notes:

1. 250μs Pulse Test

2. TC = 25

oC

VDS, Drain-Source Voltage[V]

VGS = 10V

7V

5V

4.5V

4V

3.5V

23

45

6

0.1

1

10

30

-55

oC

150

oC

* Notes :

1. VDS = 20V

2. 250μs Pulse Test

25

oC

VGS, Gate-Source Voltage[V]

0

5

10

15

20

25

0.2

0.4

0.6

0.8

1.0

* Note : TJ = 25

oC

VGS = 20V

VGS = 10V

ID, Drain Current [A]

0.4

0.8

1.2

1.6

1

10

150

oC

Notes:

1. V

GS = 0V

2. 250μs Pulse Test

50

V

SD, Body Diode Forward Voltage [V]

25

oC

0.1

1

10

1

10

100

1000

Coss

Ciss

Ciss = Cgs + Cgd (Cds = shorted)

Coss = Cds + Cgd

Crss = Cgd

* Note:

1. VGS = 0V

2. f = 1MHz

Crss

VDS, Drain-Source Voltage [V]

30

0369

12

0

2

4

6

8

10

* Note : ID = 7.6A

VDS = 50V

VDS = 100V

VDS = 160V

Qg, Total Gate Charge [nC]

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