BC856 datasheet(2/8 Pages) INFINEON

부품명	BC856

상세설명	PNP Silicon AF Transistors

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2 / 8 page

BC856...BC860

2

Dec-11-2001

Maximum Ratings

Parameter

Symbol

BC856

BC857

BC860

BC858

BC859

Unit

Collector-emitter voltage

VCEO

65

45

30

V

Collector-base voltage

VCBO

80

50

30

Collector-emitter voltage

VCES

80

50

30

Emitter-base voltage

VEBO

5

DC collector current

IC

100

mA

Peak collector current

ICM

200

mA

Peak base current

IBM

200

Peak emitter current

200

IEM

Total power dissipation

, TS = 71 °C

Ptot

330

mW

Junction temperature

Tj

150

°C

Storage temperature

Tstg

-65 ... 150

Thermal Resistance

Junction - soldering point 1)

RthJS

240

K/W

Electrical Characteristics

at TA = 25°C, unless otherwise specified.

Parameter

Symbol

Values

Unit

min.

typ.

max.

DC Characteristics

Collector-emitter breakdown voltage

IC = 10 mA, IB = 0

BC856

BC857/860

BC858/859

V(BR)CEO

65

45

30

-

V

Collector-base breakdown voltage

IC = 10 µA, IE = 0

BC856

BC857/860

BC858/859

V(BR)CBO

80

50

30

-

1For calculation of RthJA please refer to Application Note Thermal Resistance

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BC856 데이터시트(PDF) 2 Page - Infineon Technologies AG

BC856 데이터시트(HTML) 2 Page - Infineon Technologies AG

유사한 부품 번호 - BC856

유사한 설명 - BC856

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