전자부품 데이터시트 검색엔진 |
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SI8261AAC-C-IS 데이터시트(PDF) 9 Page - Silicon Laboratories |
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SI8261AAC-C-IS 데이터시트(HTML) 9 Page - Silicon Laboratories |
9 / 40 page Si826x Rev. 1.3 9 2. Regulatory Information Table 3. Regulatory Information* CSA The Si826x is certified under CSA Component Acceptance Notice 5A. For more details, see File 232873. 61010-1: Up to 600 VRMS reinforced insulation working voltage; up to 600 VRMS basic insulation working voltage. 60950-1: Up to 1000 VRMS reinforced insulation working voltage; up to 1000 VRMS basic insulation working volt- age. 60601-1: Up to 250 VRMS reinforced insulation working voltage; up to 500 VRMS basic insulation working voltage. VDE The Si826x is certified according to IEC60747 and VDE0884. For more details, see File 5006301-4880-0001. 60747-5-2: Up to 1414 Vpeak for basic insulation working voltage. VDE0884-10: Up to 1414 Vpeak for reinforced insulation working voltage. UL The Si826x is certified under UL1577 component recognition program. For more details, see File E257455. Rated up to 5000 VRMS isolation voltage for basic protection. CQC The Si826x is certified under GB4943.1-2011. For more details, see certificates CQC14001104575, CQC15001121282 and CQC15001121283. Rated up to 1000 VRMS reinforced insulation working voltage; up to 1000 VRMS basic insulation working voltage. *Note: Regulatory Certifications apply to 3.75 kVRMS rated devices which are production tested to 4.5 kVRMS for 1 sec. Regulatory Certifications apply to 5.0 kVRMS rated devices which are production tested to 6.0 kVRMS for 1 sec. For more information, see "8.Ordering Guide" on page 23. Table 4. Insulation and Safety-Related Specifications Parameter Symbol Test Condition Value Unit SOIC-8 DIP8 SDIP6 LGA8 Nominal Air Gap (Clearance) L(IO1) 4.7 min 7.2 min 9.6 min 10.0 min mm Nominal External Tracking (Creepage) L(IO2) 3.9 min 7.0 min 8.3 min 10.0 min mm Minimum Internal Gap (Internal Clearance) 0.016 0.016 0.016 0.016 mm Tracking Resistance (Proof Tracking Index) PTI IEC60112 600 600 600 600 V Erosion Depth ED 0.031 0.031 0.057 0.021 mm Resistance (Input-Output)* RIO 1012 1012 1012 1012 Capacitance (Input-Output)* CIO f = 1 MHz 1 111 pF *Note: To determine resistance and capacitance, the Si826x is converted into a 2-terminal device. Pins 1–4 (1–3, SDIP6) are shorted together to form the first terminal, and pins 5–8 (4–6, SDIP6) are shorted together to form the second terminal. The parameters are then measured between these two terminals. |
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