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SI8261AAC-C-IS 데이터시트(PDF) 9 Page - Silicon Laboratories

부품명 SI8261AAC-C-IS
상세설명  5 KV LED EMULATOR INPUT, 4.0 A ISOLATED GATE DRIVERS
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제조업체  SILABS [Silicon Laboratories]
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Si826x
Rev. 1.3
9
2. Regulatory Information
Table 3. Regulatory Information*
CSA
The Si826x is certified under CSA Component Acceptance Notice 5A. For more details, see File 232873.
61010-1: Up to 600 VRMS reinforced insulation working voltage; up to 600 VRMS basic insulation working voltage.
60950-1: Up to 1000 VRMS reinforced insulation working voltage; up to 1000 VRMS basic insulation working volt-
age.
60601-1: Up to 250 VRMS reinforced insulation working voltage; up to 500 VRMS basic insulation working voltage.
VDE
The Si826x is certified according to IEC60747 and VDE0884. For more details, see File 5006301-4880-0001.
60747-5-2: Up to 1414 Vpeak for basic insulation working voltage.
VDE0884-10: Up to 1414 Vpeak for reinforced insulation working voltage.
UL
The Si826x is certified under UL1577 component recognition program. For more details, see File E257455.
Rated up to 5000 VRMS isolation voltage for basic protection.
CQC
The Si826x is certified under GB4943.1-2011. For more details, see certificates CQC14001104575,
CQC15001121282 and CQC15001121283.
Rated up to 1000 VRMS reinforced insulation working voltage; up to 1000 VRMS basic insulation working voltage.
*Note:
Regulatory Certifications apply to 3.75 kVRMS rated devices which are production tested to 4.5 kVRMS for 1 sec.
Regulatory Certifications apply to 5.0 kVRMS rated devices which are production tested to 6.0 kVRMS for 1 sec.
For more information, see "8.Ordering Guide" on page 23.
Table 4. Insulation and Safety-Related Specifications
Parameter
Symbol
Test Condition
Value
Unit
SOIC-8
DIP8
SDIP6
LGA8
Nominal Air Gap (Clearance)
L(IO1)
4.7 min
7.2 min
9.6 min
10.0 min
mm
Nominal External Tracking
(Creepage)
L(IO2)
3.9 min
7.0 min
8.3 min
10.0 min
mm
Minimum Internal Gap
(Internal Clearance)
0.016
0.016
0.016
0.016
mm
Tracking Resistance
(Proof Tracking Index)
PTI
IEC60112
600
600
600
600
V
Erosion Depth
ED
0.031
0.031
0.057
0.021
mm
Resistance (Input-Output)*
RIO
1012
1012
1012
1012
Capacitance (Input-Output)*
CIO
f = 1 MHz
1
111
pF
*Note:
To determine resistance and capacitance, the Si826x is converted into a 2-terminal device. Pins 1–4 (1–3, SDIP6) are
shorted together to form the first terminal, and pins 5–8 (4–6, SDIP6) are shorted together to form the second terminal.
The parameters are then measured between these two terminals.


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