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BF1009SR 데이터시트(PDF) 2 Page - Infineon Technologies AG |
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BF1009SR 데이터시트(HTML) 2 Page - Infineon Technologies AG |
2 / 5 page Feb-18-2004 2 BF1009S... Thermal Resistance Parameter Symbol Value Unit Channel - soldering point1) BF1009S, BF1009SR BF1009SW Rthchs ≤ 370 ≤ 280 K/W Electrical Characteristics Parameter Symbol Values Unit min. typ. max. DC Characteristics Drain-source breakdown voltage ID = 300 µA, VG1S = 0 , VG2S = 0 V(BR)DS 12 - - V Gate1-source breakdown voltage +IG1S = 10 mA, VG2S = 0 , VDS = 0 +V(BR)G1SS 8 - 12 Gate2 source breakdown voltage ±IG2S = 10 mA, VG1S = 0 , VDS = 0 ±V(BR)G2SS 10 - 16 Gate1-source leakage current VG1S = 6 V, VG2S = 0 +IG1SS - - 60 µA Gate 2 source leakage current ±VG2S = 8 V, VG1S = 0 , VDS = 0 ±IG2SS - - 50 nA Drain current VDS = 9 V, VG1S = 0 , VG2S = 6 V IDSS - - 500 µA Operating current (selfbiased) VDS = 9 V, VG2S = 6 V IDSO 10 14 19 mA Gate2-source pinch-off voltage VDS = 9 V, ID = 100 µA VG2S(p) - 0.9 - V 1For calculation of RthJA please refer to Application Note Thermal Resistance |
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