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TS3006ITD833T 데이터시트(PDF) 3 Page - Silicon Laboratories

부품명 TS3006ITD833T
상세설명  Single Resistor Sets Output Frequency
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TS3006
TS3006 Rev. 1.0
Page 3
ELECTRICAL CHARACTERISTICS
VDD = 3V, VPWM_CNTRL= VDD, RSET = 4.32MΩ, RLOAD(FOUT) = Open Circuit, CLOAD(FOUT) = 0pF unless otherwise noted. Values are at TA = 25°C
unless otherwise noted. See Note 1.
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
Supply Voltage
VDD
1.55
5.25
V
Supply Current
IDD
1.9
2.4
µA
-40°C
≤ T
A ≤ 85°C
2.7
FOUT Period
tFOUT
39
40.1
41.2
µs
-40°C
≤ T
A ≤ 85°C
38
42
FOUT Period Line
Regulation
∆t
FOUT/V
1.55V
≤ V
DD ≤ 5.25V
0.17
%/V
FOUT Duty cycle
49
51
%
FOUT Period
Temperature
Coefficient
∆t
FOUT/∆T
0.02
%/°C
UVLO Hysteresis
VUVLO
(VDD=1.55V) – (VDD_SHUTDOWN VOLTAGE)
150
250
mV
FOUT Rise Time
tRISE
See Note 2, CL = 15pF
10
ns
FOUT Fall Time
tFALL
See Note 2, CL = 15pF
10
ns
FOUT Jitter
See Note 3
0.001
%
RSET Pin Voltage
V(RSET)
0.3
V
Maximum Oscillator
Frequency
Fosc
RSET= 360K
300
kHz
High Level Output
Voltage, FOUT
VDD - VOH
IOH = 1mA
160
mV
Low Level Output
Voltage, FOUT
VOL
IOL = 1mA
140
mV
Note 1: All devices are 100% production tested at TA = +25°C and are guaranteed by characterization for TA = TMIN to TMAX, as specified.
Note 2: Output rise and fall times are measured between the 10% and 90% of the VDD power-supply voltage levels. The specification is based
on lab bench characterization and is not tested in production.
Note 3: Timing jitter is the ratio of the peak-to-peak variation of the period to the mean of the period. The specification is based on lab bench
characterization and is not tested in production.


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