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BGA622 데이터시트(PDF) 4 Page - Infineon Technologies AG |
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BGA622 데이터시트(HTML) 4 Page - Infineon Technologies AG |
4 / 9 page Data Sheet 4 2002-09-13 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Package Marking Chip BGA622 SOT343 BRs T0535 Silicon Germanium Wide Band Low Noise Amplifier BGA622 VPS05605 4 2 1 3 Features • High gain, |S 21| 2=14.8 dB at 1.575 GHz |S 21| 2=13.9 dB at 1.9 GHz |S 21| 2=13.3 dB at 2.14 GHz |S 21| 2=12.7 dB at 2.4 GHz • Low noise figure, NF=1.1 dB at 2.14 GHz • Operating frequency range 0.5 - 6 GHz • Typical supply voltage: 2.75 V • On/Off - Switch • Output-match on chip, input pre-matched • Low part count •70 GHz f T - Silicon Germanium technology Applications • LNA for GSM, GPS, DCS, PCS, UMTS, Bluetooth, ISM and WLAN Vcc,4 Out,3 GND,2 In,1 On/Off 20 kOhm Description The BGA622 is a wide band low noise amplifier, based on Infineon Technologies’ Silicon Germanium Technology B7HF. In order to provide the LNA in a small package the out-pin is simultaneously used for RF out and On/Off switch. This functionality can be accessed using a RF-Choke at the Out pin, where a DC level of 0 V or an open switches the device on and a DC level of Vcc switches the device off. While the device is switched off, it provides an insertion loss of 20 dB together with a high IIP3 up to 18 dBm. |
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