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BGA622 데이터시트(PDF) 6 Page - Infineon Technologies AG |
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BGA622 데이터시트(HTML) 6 Page - Infineon Technologies AG |
6 / 9 page BGA622 Data Sheet 6 2002-09-13 Electrical Characteristics at T A=25°C (measured according to fig. 1) Vcc=2.75 V, Frequency=2.14 GHz, unless otherwise specified Parameter Symbol min. typ. max. Unit Insertion power gain |S 21| 2 13.3 dB Insertion power gain (Off-State) |S 21| 2 -20 dB Input Return Loss (On-State) RL IN 8dB Output Return Loss (On-State) RL OUT 10 dB Noise Figure (Z S=50W) F 50 W 1.1 dB Input Third Order Intercept Point 1) (On-State) Df=1MHz, PIN=-28dBm 1) IP3 value depends on termination of all intermodulation frequency components. Termination used for this measurement is 50 W from 0.1 to 6 GHz IIP 3 3dBm Input Third Order Intercept Point 1) (Off-State) Df=1MHz, PIN=-8dBm IIP 3 18 dBm Input Power at 1dB Gain Compression P -1dB -13 dBm Figure 1 S-Parameter Test Circuit (loss-free microstrip test-fixture) Figure 2 Application Circuit DC, 2.75V 150pF Out, 50 W In, 50 W DC, 2.75V 150pF Out In 2.2nH (for improved input match) 47pF (DC-Block) DC, 2.75V RFC On/Off Switch 47pF (DC-Block) |
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