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3 / 13 page STF7LN80K5 Electrical ratings DocID028769 Rev 1 3/13 1 Electrical ratings Table 2: Absolute maximum ratings Symbol Parameter Value Unit VGS Gate-source voltage ± 30 V ID (1) Drain current (continuous) at TC = 25 °C 5 A ID (1) Drain current (continuous) at TC = 100 °C 3.4 A ID (2) Drain current (pulsed) 20 A PTOT Total dissipation at TC = 25 °C 25 W VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1 s; TC=25 °C) 2500 V dv/dt (3) Peak diode recovery voltage slope 4.5 V/ns dv/dt (4) MOSFET dv/dt ruggedness 50 Tstg Storage temperature - 55 to 150 °C TJ Operating junction temperature Notes: (1) Limited by maximum junction temperature (2) Pulse width limited by safe operating area (3) ISD ≤ 5 A, di/dt 100 A/μs; VDS peak < V(BR)DSS,VDD= 640 V (4) VDS ≤ 640 V Table 3: Thermal data Symbol Parameter Value Unit Rthj-case Thermal resistance junction-case 5 °C/W Rthj-amb Thermal resistance junction-ambient 62.5 °C/W Table 4: Avalanche characteristics Symbol Parameter Value Unit IAR Avalanche current, repetitive or not repetitive (pulse width limited by Tjmax) 1.5 A EAS Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) 200 mJ |
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