This is information on a product in full production.

April 2013

DocID022346 Rev 6

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STGW60H65DRF

60 A, 650 V field stop trench gate IGBT with Ultrafast diode

Datasheet

Figure 1. Internal schematic diagram

Features

 Very high speed switching

 Tight parameters distribution

 Safe paralleling

 Low thermal resistance

 6 µs short-circuit withstand time

 Ultrafast soft recovery antiparallel diode

Applications

 Photovoltaic inverters

 Uninterruptible power supply

 Welding

 Power factor correction

 High switching frequency converters

Description

This device is an IGBT developed using an

advanced proprietary trench gate and field stop

structure. This IGBT is the result of a compromise

between conduction and switching losses,

maximizing the efficiency of high switching

frequency converters. Furthermore, a slightly

tight parameter distribution result in easier

paralleling operation.

TO-247

1

2

3

Table 1. Device summary

Order code

Marking

Package

Packaging

STGW60H65DRF

GW60H65DRF

TO-247

Tube

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