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STFI24NM60N 데이터시트(PDF) 3 Page - STMicroelectronics

부품명 STFI24NM60N
상세설명  Low input capacitance and gate charge
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DocID022440 Rev 3
3/12
STFI24NM60N
Electrical ratings
12
1
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
Unit
VGS
Gate- source voltage
± 30
V
ID
Drain current (continuous) at TC = 25 °C
17(1)
1.
Limited by maximum junction temperature.
A
ID
Drain current (continuous) at
TC = 100 °C
11(1)
A
IDM
(2)
2.
Pulse width limited by safe operating area.
Drain current (pulsed)
68(1)
A
PTOT
Total dissipation at TC = 25 °C
30
W
dv/dt(3)
3.
ISD ≤ 17 A, di/dt ≤ 400 A/µs, peak VDS ≤ V(BR)DSS, VDD = 80% V(BR)DSS
Peak diode recovery voltage slope
15
V/ns
VISO
Insulation withstand voltage (RMS) from
all three leads to external heat sink
(t=1 s; TC=25 °C)
2500
V
TJ
Tstg
Operating junction temperature
Storage temperature
-55 to 150
°C
Table 3. Thermal data
Symbol
Parameter
Value
Unit
Rthj-case Thermal resistance junction-case max.
4.17
°C/W
Rthj-amb
Thermal resistance junction-ambient
max.
62.5
°C/W
Table 4. Avalanche characteristics
Symbol
Parameter
Value
Unit
IAR
Avalanche current, repetitive or not-
repetitive (pulse width limited by TJ max)
6A
EAS
Single pulse avalanche energy
(starting TJ = 25 °C, ID = IAR, VDD = 50 V)
300
mJ


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