STGD10HF60KD datasheet(4/21 Pages) STMICROELECTRONICS

부품명	STGD10HF60KD

상세설명	Automotive-grade 10 A, 600 V, short-circuit rugged IGBT with Ultrafast diode

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Electrical characteristics

STGD10HF60KD

4/21

DocID022874 Rev 3

2

Electrical characteristics

TCASE=25 °C unless otherwise specified.

Table 4. Static

Symbol

Parameter

Test conditions

Min.

Typ.

Max. Unit

V(BR)CES

Collector-emitter

breakdown voltage

(VGE= 0)

IC = 1 mA, TC = -40 °C

(1)

IC = 1 mA

IC = 1 mA, TC = 150 °C

1.

Value guaranteed by design

600

610

650

700

V

IGES

Gate-emitter leakage

current (VCE = 0)

VGE = ±20 V

VGE = ±20 V, TC = 150 °C

±100

± 1

nA

µA

ICES

Collector cut-off current

(VGE = 0)

VCE = 600 V

VCE = 600 V, TC = 150 °C

150

1

µA

mA

VGE(th)

Gate threshold voltage

VCE = VGE, IC = 250 µA

4.5

6.5

V

VCE(sat)

Collector-emitter

saturation voltage

VGE = 15 V, IC = 5 A

1.4

2.5

V

Table 5. Dynamic (1)

1.

Values guaranteed by design

Symbol

Parameter

Test conditions

Min. Typ.

Max.

Unit

Cies

Input capacitance

VCE = 25 V, f = 1 MHz, VGE= 0

-430

-

pF

Coes

Output capacitance

-

45

-

pF

Cres

Reverse transfer

capacitance

-10

-

pF

Qg

Total gate charge

VCE = 400 V, IC = 5 A,

VGE = 15 V

-23

-

nC

Qge

Gate-emitter charge

-

4

-

nC

Qgc

Gate-collector charge

-

11

-

nC

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