전자부품 데이터시트 검색엔진 |
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SMM4F12A 데이터시트(PDF) 5 Page - Shanghai Shunye Electronics Co.,Ltd. |
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SMM4F12A 데이터시트(HTML) 5 Page - Shanghai Shunye Electronics Co.,Ltd. |
5 / 5 page SMM4F Characteristics Figure 9. Leakage current versus junction temperature (typical values) Figure 5. Junction capacitance versus reverse applied voltage (typical values) Figure 6. Peak forward voltage drop versus peak forward current (typical values) 10 100 1000 10000 1 10 100 F=1 MHz V OSC=30 mVRMS T j=25 °C SMM4F5.0A SMM4F15A SMM4F24A SMM4F33A C(pF) V (V) R 1.0E-02 1.0E-01 1.0E+00 1.0E+01 1.0E+02 0.0 0.5 1.0 1.5 2.0 2.5 3.0 T j =25 °C T j =125 °C I (A) FM V (V) FM Figure 7. Relative variation of thermal impedance junction to ambient versus pulse duration (printed ciruit board FR4, SCu = 1 cm 2) Figure 8. Thermal resistance junction to ambient versus copper surface under each lead (printed circuit board FR4, eCu = 35 µm) 0.00 0.01 0.10 1.00 1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01 1.0E+02 1.0E+03 On recommended pad layout Zth(j-a)/Rth(j-a) t (S) p 40 60 80 100 120 140 160 180 200 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 Rth(j-a)(°C/W) S (cm ) CU 2 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03 1.E+04 25 50 75 100 125 150 175 V R=VRM V BR≤11.7V V BR>11.7V T (°C) j I (nA) R www.shunyegroup.com.cn 5/5 |
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