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TPD13S523RSVR 데이터시트(PDF) 5 Page - Texas Instruments |
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TPD13S523RSVR 데이터시트(HTML) 5 Page - Texas Instruments |
5 / 23 page TPD13S523 www.ti.com SLVSBC5D – MARCH 2012 – REVISED OCTOBER 2015 6.5 Electrical Characteristics TA = –40°C to 85°C (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT LOAD SWITCH ICC Supply current at 5V_SUPPLY 5V_SUPPLY =5V, 5V OUT = Open 6.5 7 10 µA ISC Short-circuit current at 5V_OUT 5V_SUPPLY =5V, 5V_OUT = GND 100 116 147 mA IBACKDRIVE Reverse leakage current at 5VOUT 5V_SUPPLY =0V, 5V_OUT = 5 V 0.01 0.69 µA VDROP 5V_OUT output voltage drop 5V_SUPPLY =5V, I5V_OUT = 55 mA 170 205 mV CONNECTOR PINS VRWM Reverse stand-off voltage 5.5 V Ipp = 1 A, 8/20 μs(1) 13 VCLAMP Clamp voltage with ESD strike V Ipp = 3 A, 8/20 μs(1) 15 IIO Leakage current through external signal pins(2) 5V_SUPPLY =5V, VIO = 5 V 2 7 65 nA Current from IO Port to supply pins when powered IOFF 5V_SUPPLY = 0 V, VIO = 2.5 V 1 5 44 nA down through signal pins(3) Diode forward voltage through external signal VF ID = 8 mA 0.7 0.85 0.95 V pins(2); lower clamp diode Dynamic resistance of ESD clamps external RDYN Pin to ground(2) 0.5 Ω pins(3) 5V_SUPPLY = 5 V, VIO = 2.5 V; CIO_TMDS IO capacitance Dx+, Dx– pins to GND 1 pF ƒ = 1 MHz 5V_SUPPLY = 5 V, VIO = 2.5 V; ΔCIO_TMDS Differential capacitance for the Dx+, Dx– lines 0.05 pF ƒ = 1 MHz CIO_CONTRO 5V_SUPPLY = 5 V, VIO = 2.5 V; CTRLx pin capacitance 1 pF L ƒ = 1 MHz VBR Break-down voltage through signal pins(3) IIO = 1 mA 6 V (1) Non-repetitive current pulse of an 8/20 µs exponentially decaying waveform according to IEC 61000-4-5. (2) Extraction of RDYN using least squares fit of TLP characteristics between I=1A AND I=10A. (3) Signal pins are Dx+, Dx–, and CTRLx. Copyright © 2012–2015, Texas Instruments Incorporated Submit Documentation Feedback 5 Product Folder Links: TPD13S523 |
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