Characteristics

STPS10H100C

2/10

DocID024444 Rev 1

1

Characteristics

When diodes 1 and 2 are used simultaneously:

T

Table 2. Absolute ratings (limiting values, per diode)

Symbol

Parameter

Value

Unit

Repetitive peak reverse voltage

100

V

10

A

Average forward

current

 = 0.5

Per device

5

10

A

TO-220FPAB

Surge non repetitive forward current

180

A

Repetitive peak reverse current

1

A

Repetitive peak avalanche power

515

W

Storage temperature range

-65 to + 175

°C

175

°C

dV/dt

Critical rate of rise of reverse voltage

10000

V/µs

1.

condition to avoid thermal runaway for a diode on its own heatsink

dPtot

dTj

---------------

1

Rth j

a

–



--------------------------



Table 3. Thermal resistance

Symbol

Parameter

Value

Unit

Junction to case

Per diode

2.2

°C/W

Total

1.3

Coupling

0.3

Junction to case

TO-220FPAB

Per diode

4.5

°C/W

Total

3.5

Coupling

2.5

Table 4. Static electrical characteristics (per diode)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

(1)

Reverse leakage current

3.5

A

1.3

4.5

mA

(2)

Forward voltage drop

0.73

V

0.57

0.61

0.85

0.66

0.71

1.

2.