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3 / 13 page STE145N65M5 Electrical ratings DocID025538 Rev 2 3/13 1 Electrical ratings Table 2: Absolute maximum ratings Symbol Parameter Value Unit VGS Gate-source voltage ± 25 V ID Drain current (continuous) at TC = 25 °C 143 A ID Drain current (continuous) at TC = 100 °C 90 A IDM (1) Drain current (pulsed) 572 A PTOT Total dissipation at TC = 25 °C 679 W IAR Avalanche current, repetitive or not repetitive (pulse width limited by Tj max) 12 A EAS Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) 2420 mJ dv/dt (2) Peak diode recovery voltage slope 15 V/ns VISO Isolation withstand voltage applied between each pin and heatsink plate (AC voltage, t = 60 s) 2.5 kV Tstg Storage temperature - 55 to 150 °C Tj Max. operating junction temperature 150 Notes: (1) Pulse width limited by safe operating area. (2) ISD ≤ 143 A, di/dt ≤ 400 A/µs; VDS(peak) < V(BR)DSS, VDD = 400 V. Table 3: Thermal data Symbol Parameter Value Unit Rthj-case Thermal resistance junction-case max 0.184 °C/W Rthj-amb Thermal resistance junction-ambient max 30 °C/W |
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