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STGIPS20C60T-H 데이터시트(PDF) 7 Page - STMicroelectronics |
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STGIPS20C60T-H 데이터시트(HTML) 7 Page - STMicroelectronics |
7 / 19 page DocID026322 Rev 2 7/19 STGIPS20C60T-H Electrical characteristics 3 Electrical characteristics TJ = 25 °C unless otherwise specified. Note: tON and tOFF include the propagation delay time of the internal drive. tC(ON) and tC(OFF) are the switching time of IGBT itself under the internally given gate driving condition. Table 7. Inverter part Symbol Parameter Test conditions Value Unit Min. Typ. Max. VCE(sat) Collector-emitter saturation voltage VCC = Vboot = 15 V, VIN (1)= 0 ÷ 5 V, IC = 20 A -1.6 2 V VCC = Vboot = 15 V, VIN (1)= 0 ÷ 5 V, IC = 20 A, TJ = 125 °C -1.7 ICES Collector-cut off current (VIN (1)= 0 “logic state”) VCE = 550 V, VCC = VBoot = 15 V - 100 µA VF Diode forward voltage VIN (1) = 0 “logic state”, I C = 20 A - 2.2 V Inductive load switching time and energy ton Turn-on time VPN = 300 V, VCC = Vboot = 15 V, VIN (1) = 0 ÷ 5 V, IC = 20 A (see Figure 5) -390 - ns tc(on) Crossover time (on) - 170 - toff Turn-off time - 970 - tc(off) Crossover time (off) - 150 - trr Reverse recovery time - 284 - Eon Turn-on switching losses - 520 - µJ Eoff Turn-off switching losses - 460 - 1. Applied between HINi, LINi and GND for i = U, V, W. |
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