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STP3NK50Z 데이터시트(PDF) 4 Page - STMicroelectronics

부품명 STP3NK50Z
상세설명  Gate charge minimized
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Electrical characteristics
STP3NK50Z
4/14
DocID025103 Rev 1
2
Electrical characteristics
(TCASE = 25 °C unless otherwise specified).
Table 5. On/off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source breakdown
voltage (VGS= 0)
ID = 1 mA
500
V
IDSS
Zero gate voltage drain
current (VGS = 0)
VDS = 500 V
VDS = 500 V, Tc=125 °C
1
50
µA
µA
IGSS
Gate body leakage current
(VDS = 0)
VGS = ± 20 V
±10
nA
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 50 µA
3
3.75
4.5
V
RDS(on)
Static drain-source on-
resistance
VGS = 10 V, ID= 1.15 A
2.8
3.3
Ω
Table 6. Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
g(1)
1.
Pulsed: Pulse duration = 300 ìs, duty cycle 1.5 %.
Forward transconductance
VDS =15 V, ID=1.15 A
-
1.5
S
Ciss
Input capacitance
VDS =25 V, f=1 MHz, VGS=0
-
280
pF
Coss
Output capacitance
-
42
pF
Crss
Reverse transfer
capacitance
-8
pF
Coss eq.
(2)
2.
Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
Equivalent capacitance time
related
VGS = 0, VDS = 0 to 400 V
-
27.5
pF
td(on)
Turn-on delay time
VDD = 250 V, ID = 1.15 A,
RG=4.7 Ω, VGS=10 V
(see Figure 19 and 15)
-8
ns
tr
Rise time
-
13
ns
td(off)
Turn-off delay time
-
24
ns
tf
Fall time
-
14
ns
Qg
Total gate charge
VDD = 400 V, ID = 2.3 A
VGS =10 V
(see Figure 16)
-11
15
nC
Qgs
Gate-source charge
-
2.5
nC
Qgd
Gate-drain charge
-
5.6
nC


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