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STP3NK50Z 데이터시트(PDF) 4 Page - STMicroelectronics |
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4 / 14 page Electrical characteristics STP3NK50Z 4/14 DocID025103 Rev 1 2 Electrical characteristics (TCASE = 25 °C unless otherwise specified). Table 5. On/off states Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Drain-source breakdown voltage (VGS= 0) ID = 1 mA 500 V IDSS Zero gate voltage drain current (VGS = 0) VDS = 500 V VDS = 500 V, Tc=125 °C 1 50 µA µA IGSS Gate body leakage current (VDS = 0) VGS = ± 20 V ±10 nA VGS(th) Gate threshold voltage VDS = VGS, ID = 50 µA 3 3.75 4.5 V RDS(on) Static drain-source on- resistance VGS = 10 V, ID= 1.15 A 2.8 3.3 Ω Table 6. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit g(1) 1. Pulsed: Pulse duration = 300 ìs, duty cycle 1.5 %. Forward transconductance VDS =15 V, ID=1.15 A - 1.5 S Ciss Input capacitance VDS =25 V, f=1 MHz, VGS=0 - 280 pF Coss Output capacitance - 42 pF Crss Reverse transfer capacitance -8 pF Coss eq. (2) 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS Equivalent capacitance time related VGS = 0, VDS = 0 to 400 V - 27.5 pF td(on) Turn-on delay time VDD = 250 V, ID = 1.15 A, RG=4.7 Ω, VGS=10 V (see Figure 19 and 15) -8 ns tr Rise time - 13 ns td(off) Turn-off delay time - 24 ns tf Fall time - 14 ns Qg Total gate charge VDD = 400 V, ID = 2.3 A VGS =10 V (see Figure 16) -11 15 nC Qgs Gate-source charge - 2.5 nC Qgd Gate-drain charge - 5.6 nC |
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