전자부품 데이터시트 검색엔진 |
|
STPS15L45CBY-TR 데이터시트(PDF) 2 Page - STMicroelectronics |
|
STPS15L45CBY-TR 데이터시트(HTML) 2 Page - STMicroelectronics |
2 / 8 page Characteristics STPS15L45C-Y 2/8 Doc ID018565 Rev 2 1 Characteristics When the diodes 1 and 2 are used simultaneously: ∆Tj(diode 1) = P(diode 1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c) Table 2. Absolute Ratings (limiting values) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 45 V IF(RMS) Forward rms voltage 10 A IF(AV) Average forward current Tc = 140 °C δ = 0.5 Per diode Per device 7.5 15 A IFSM Surge non repetitive forward current tp = 10 ms sinusoidal 75 A IRRM Peak repetitive reverse current tp = 2 µs square F = 1 kHz 1A PARM Repetitive peak avalanche power tp = 10 µs Tj = 125 °C 266 W Tstg Storage temperature range -65 to +175 °C Tj Maximum operating junction temperature range(1) 1. condition to avoid thermal runaway for a diode on its own heatsink -40 to +150 °C dV/dt Critical rate of rise of reverse voltage 10000 V/µs Table 3. Thermal resistance Symbol Parameter Value Unit Rth(j-c) Junction to case Per diode Total 4 2.4 °C/W Rth(c) Coupling 0.7 Table 4. Static electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit IR(1) Reverse leakage current Tj = 25 °C VR = VRRM -1 mA Tj = 125 °C - 23 45 mA dPtot dTj < 1 Rth(j-a) |
유사한 부품 번호 - STPS15L45CBY-TR |
|
유사한 설명 - STPS15L45CBY-TR |
|
|
링크 URL |
개인정보취급방침 |
ALLDATASHEET.CO.KR |
ALLDATASHEET 가 귀하에 도움이 되셨나요? [ DONATE ] |
Alldatasheet는? | 광고문의 | 운영자에게 연락하기 | 개인정보취급방침 | 링크교환 | 제조사별 검색 All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |