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STPSC8TH13TI 데이터시트(PDF) 1 Page - STMicroelectronics

부품명 STPSC8TH13TI
상세설명  Dual 650 V power Schottky silicon carbide diode in series
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제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
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This is information on a product in full production.
January 2016
DocID024698 Rev 3
1/8
8
STPSC8TH13TI
Dual 650 V power Schottky silicon carbide diode in series
Datasheet
- production data
Features
 No or negligible reverse recovery
 Switching behavior independent of
temperature
 Suited for specific bridge-less topologies
 High forward surge capability
 Insulated package:
– Capacitance: 7 pF
– Insulated voltage: 2500 V rms
Description
The SiC diode is an ultrahigh performance power
Schottky diode. It is manufactured using a silicon
carbide substrate. The wide band gap material
allows the design of a Schottky diode structure
with a 650 V rating. Due to the Schottky
construction, no recovery is shown at turn-off and
ringing patterns are negligible. The minimal
capacitive turn-off behavior is independent of
temperature.
Especially suited for use in specific bridge-less
topologies, this dual 650 V rectifier will boost the
performance in hard switching conditions. Its high
forward surge capability ensures a good
robustness during transient phases.
.
Table 1. Device summary (per diode)
Symbol
Value
IF(AV)
8 A
VRRM
650 V
Tj (max.)
175 °C
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