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IRF60R217 데이터시트(PDF) 2 Page - Infineon Technologies AG

부품명 IRF60R217
상세설명  Battery powered circuits
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제조업체  INFINEON [Infineon Technologies AG]
홈페이지  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

IRF60R217 데이터시트(HTML) 2 Page - Infineon Technologies AG

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IRF60R217
2
2016-01-05
Absolute Maximum Rating
Symbol
Parameter
Max.
Units
A  
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
58
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
41
IDM
Pulsed Drain Current 
217
PD @TC = 25°C
Maximum Power Dissipation
83
W
Linear Derating Factor
0.56
W/°C
VGS
Gate-to-Source Voltage
± 20
V
TJ
TSTG
Operating Junction and
Storage Temperature Range
-55 to + 175  
°C  
Soldering Temperature, for 10 seconds (1.6mm from case)
300
Avalanche Characteristics 
EAS (Thermally limited)
Single Pulse Avalanche Energy 
85
mJ
EAS (Thermally limited)
Single Pulse Avalanche Energy 
124
IAR
Avalanche Current 
See Fig 15, 16, 23a, 23b
A
EAR
Repetitive Avalanche Energy 
mJ
Thermal Resistance  
Symbol
Parameter
Typ.
Max.
Units
RJC
Junction-to-Case 
–––
1.8
°C/W  
RJA
Junction-to-Ambient (PCB Mount) 
–––
50
RJA
Junction-to-Ambient 
–––
110
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
60
–––
–––
V
VGS = 0V, ID = 250µA
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
––– 0.047 –––
V/°C Reference to 25°C, ID = 1mA 
RDS(on)
Static Drain-to-Source On-Resistance
–––
8.0
9.9
VGS = 10V, ID = 35A 
–––
10
–––
VGS = 6.0V, ID = 18A 
VGS(th)
Gate Threshold Voltage
2.1
–––
3.7
V
VDS = VGS, ID = 50µA
IDSS
Drain-to-Source Leakage Current
–––
–––
1.0
µA
VDS = 60V, VGS = 0V
–––
–––
150
VDS = 60V,VGS = 0V,TJ =125°C
IGSS
Gate-to-Source Forward Leakage
–––
–––
100
nA
VGS = 20V
Gate-to-Source Reverse Leakage
–––
–––
-100
VGS = -20V
RG
Gate Resistance
–––
2.0
–––

m

Notes:

Repetitive rating; pulse width limited by max. junction temperature.
Limited by TJmax, starting TJ = 25°C, L = 0.14mH, RG = 50, IAS = 35A, VGS =10V.

ISD  35A, di/dt  862A/µs, VDD  V(BR)DSS, TJ 175°C.

Pulse width
 400µs; duty cycle  2%.
Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS.
Ris measured at TJ approximately 90°C.

When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to
application note #AN-994.please refer to application note to AN-994: http://www.irf.com/technical-info/appnotes/an-994.pdf
Limited by TJmax, starting TJ = 25°C, L = 1mH, RG = 50, IAS = 16A, VGS =10V.


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