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VNH7070AS 데이터시트(PDF) 8 Page - STMicroelectronics |
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VNH7070AS 데이터시트(HTML) 8 Page - STMicroelectronics |
8 / 38 page Electrical specifications VNH7070AS 8/38 DocID028088 Rev 3 2.2 Thermal data VESD Electrostatic discharge (Human body model: R = 1.5 k Ω; C = 100 pF) –INA, INB, PWM – SEL0 –CS –VCC –Output 2 2 2 4 4 kV VESD Charge device model (CDM-AEC-Q100-011) 750 V Tc Junction operating temperature -40 to 150 °C TSTG Storage temperature -55 to 150 °C Table 4. Absolute maximum ratings (continued) Symbol Parameter Value Unit Table 5. Thermal data Symbol Parameter Max. value Unit Rthj-pin Thermal resistance junction-pin HSD 31 °C/W LSD 44 °C/W Rthj-amb Thermal resistance junction-ambient (JEDEC JESD 51-2) (1) 1. Device mounted on two-layers 2s0p PCB. See Figure 24 °C/W Rthj-amb Thermal resistance junction-ambient (JEDEC JESD 51-2) (2) 2. Device mounted on four-layers 2s2p PCB. HSD 39.5 °C/W LSD 55 °C/W |
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