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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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ACE7402A 데이터시트(PDF) 3 Page - ACE Technology Co., LTD. |
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ACE7402A 데이터시트(HTML) 3 Page - ACE Technology Co., LTD. |
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3 / 7 page  ACE7402A N-Channel Enhancement Mode MOSFET VER 1.1 3 Electrical Characteristics TA=25℃, unless otherwise noted Parameter Symbol Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage V(BR)DSS VGS=0V, ID=250uA 20 V Gate Threshold Voltage VGS(th) VDS=VGS, ID=250uA 0.35 0.85 Gate Leakage Current IGSS VDS=0V,VGS=±12V ±100 nA Zero Gate Voltage Drain Current IDSS VDS=20V, VGS=0V 1 uA VDS=20V, VGS=0V TJ=55℃ 5 VDS≧5V, VGS=4.5V 6 A Drain-Source On-Resistance RDS(ON) VGS=4.5V, ID=4.0A 0.060 0.065 Ω VGS=2.5V, ID=3.4A 0.067 0.080 VGS=1.8V, ID=2.8A 0.076 0.095 Forward Transconductance Gfs VDS=5V,ID=-3.6A 10 S Diode Forward Voltage VSD IS=1.6A, VGS=0V 0.8 1.2 V Dynamic Total Gate Charge Qg VDS=6V, VGS=4.5V, ID=2.8A 4.8 8 nC Gate-Source Charge Qgs 1.0 Gate-Drain Charge Qgd 1.0 Input Capacitance Ciss VDS=6V, VGS=0V, f=1MHz 485 pF Output Capacitance Coss 85 Reverse Transfer Capacitance Crss 40 Turn-On Time td(on) VDD=6V, RL=6 Ω, V GEN=4.5V, ID=1.0A ,RG=6 Ω 8 14 nS tr 12 18 Turn-Off Time td(off) 30 35 tf 12 16 |
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