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IRFP064N 데이터시트(PDF) 2 Page - Kersemi Electronic Co., Ltd. |
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IRFP064N 데이터시트(HTML) 2 Page - Kersemi Electronic Co., Ltd. |
2 / 8 page IRFP064N Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 55 ––– ––– V VGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.057 ––– V/°C Reference to 25°C, ID = 1mA RDS(on) Static Drain-to-Source On-Resistance ––– ––– 0.008 Ω VGS = 10V, ID = 59A VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA gfs Forward Transconductance 42 ––– ––– S VDS = 25V, ID = 59A ––– ––– 25 µA VDS = 55V, VGS = 0V ––– ––– 250 VDS = 44V, VGS = 0V, TJ = 150°C Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V Gate-to-Source Reverse Leakage ––– ––– -100 nA VGS = -20V Qg Total Gate Charge ––– ––– 170 ID = 59A Qgs Gate-to-Source Charge ––– ––– 32 nC VDS = 44V Qgd Gate-to-Drain ("Miller") Charge ––– ––– 74 VGS = 10V, See Fig. 6 and 13
td(on) Turn-On Delay Time ––– 14 ––– VDD = 28V tr Rise Time ––– 100 ––– ID = 59A td(off) Turn-Off Delay Time ––– 43 ––– RG = 2.5 Ω tf Fall Time ––– 70 ––– RD = 0.39Ω, See Fig. 10
Between lead, ––– ––– 6mm (0.25in.) from package and center of die contact Ciss Input Capacitance ––– 4000 ––– VGS = 0V Coss Output Capacitance ––– 1300 ––– pF VDS = 25V Crss Reverse Transfer Capacitance ––– 480 ––– ƒ = 1.0MHz, See Fig. 5 nH Electrical Characteristics @ TJ = 25°C (unless otherwise specified) LD Internal Drain Inductance LS Internal Source Inductance ––– ––– S D G IGSS ns 5.0 IDSS Drain-to-Source Leakage Current Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) Notes: V DD = 25V, starting TJ = 25°C, L = 190µH RG = 25Ω, IAS = 59A. (See Figure 12) ISD ≤ 59A, di/dt ≤ 290A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C Pulse width ≤ 300µs; duty cycle ≤ 2%. Caculated continuous current based on maximum allowable junction temperature; for recommended current-handling of the package refer to Design Tip # 93-4 Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) ––– ––– showing the ISM Pulsed Source Current integral reverse (Body Diode) ––– ––– p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 59A, VGS = 0V trr Reverse Recovery Time ––– 110 170 ns TJ = 25°C, IF = 59A Qrr Reverse Recovery Charge ––– 450 680 nC di/dt = 100A/µs
Source-Drain Ratings and Characteristics S D G 110 390 13
Uses IRF3205 data and test conditions 2014-8-14 2 www.kersemi.com |
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