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SPI11N60S5 데이터시트(PDF) 2 Page - Infineon Technologies AG |
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SPI11N60S5 데이터시트(HTML) 2 Page - Infineon Technologies AG |
2 / 12 page 2004-03-30 Rev. 2.1 Page 2 SPP11N60S5, SPB11N60S5 SPI11N60S5 Maximum Ratings Parameter Symbol Value Unit Drain Source voltage slope VDS = 480 V, ID = 11 A, Tj = 125 °C dv/dt 20 V/ns Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Thermal resistance, junction - case RthJC - - 1 K/W Thermal resistance, junction - ambient, leaded RthJA - - 62 SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 2) RthJA - - - 35 62 - Soldering temperature, 1.6 mm (0.063 in.) from case for 10s Tsold - - 260 °C Electrical Characteristics, at Tj=25°C unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=0.25mA 600 - - V Drain-Source avalanche breakdown voltage V(BR)DS VGS=0V, ID=11A - 700 - Gate threshold voltage VGS(th) ID=500µΑ, VGS=VDS 3.5 4.5 5.5 Zero gate voltage drain current IDSS VDS=600V, VGS=0V, Tj=25°C, Tj=150°C - - - - 25 250 µA Gate-source leakage current IGSS VGS=20V, VDS=0V - - 100 nA Drain-source on-state resistance RDS(on) VGS=10V, ID=7A, Tj=25°C Tj=150°C - - 0.34 0.92 0.38 - Ω Gate input resistance RG f =1MHz, open Drain - 29 - |
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