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FSB50760SF 데이터시트(PDF) 2 Page - Fairchild Semiconductor |
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FSB50760SF 데이터시트(HTML) 2 Page - Fairchild Semiconductor |
2 / 11 page ©2012 Fairchild Semiconductor Corporation 2 www.fairchildsemi.com FSB50760SF, FSB50760SFT Rev. C6 Absolute Maximum Ratings Inverter Part (each MOSFET unless otherwise specified.) Control Part (each HVIC unless otherwise specified.) Bootstrap Diode Part (each bootstrap diode unless otherwise specified.) Thermal Resistance Total System 1st Notes: 1. For the measurement point of case temperature TC, please refer to Figure 4. 2. Marking “ * “ is calculation value or design factor. Symbol Parameter Conditions Rating Unit VDSS Drain-Source Voltage of Each MOSFET 600 V *ID 25 Each MOSFET Drain Current, Continuous TC = 25°C 3.6 A *ID 80 Each MOSFET Drain Current, Continuous TC = 80°C 2.7 A *IDP Each MOSFET Drain Current, Peak TC = 25°C, PW < 100 s 9.4 A *IDRMS Each MOSFET Drain Current, Rms TC = 80°C, FPWM < 20 kHz 1.9 Arms *PD Maximum Power Dissipation TC = 25°C, For Each MOSFET 14.5 W Symbol Parameter Conditions Rating Unit VCC Control Supply Voltage Applied Between VCC and COM 20 V VBS High-side Bias Voltage Applied Between VB and VS 20 V VIN Input Signal Voltage Applied Between IN and COM -0.3 ~ VCC + 0.3 V Symbol Parameter Conditions Rating Unit VRRMB Maximum Repetitive Reverse Voltage 600 V * IFB Forward Current TC = 25°C 0.5 A * IFPB Forward Current (Peak) TC = 25°C, Under 1ms Pulse Width 1.5 A Symbol Parameter Conditions Rating Unit RJC Junction to Case Thermal Resistance Each MOSFET under Inverter Oper- ating Condition (1st Note 1) 8.6 °C/W Symbol Parameter Conditions Rating Unit TJ Operating Junction Temperature -40 ~ 150 °C TSTG Storage Temperature -40 ~ 125 °C VISO Isolation Voltage 60 Hz, Sinusoidal, 1 Minute, Con- nect Pins to Heat Sink Plate 1500 Vrms |
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