KM681001A

CMOS SRAM

PRELIMINARY

Rev 5.0

- 1 -

February 1998

Document Title

128Kx8 High Speed Static RAM(5V Operating), Evolutionary Pin Out.

Operated at Commercial Temperature Range.

Revision History

The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the

right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters

of this device. If you have any questions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.

Rev. No.

Rev. 0.0

Rev. 1.0

Rev. 2.0

Rev. 3.0

Rev. 4.0

Rev. 5.0

Remark

Design Target

Preliminary

Final

Final

Final

Final

History

Initial release with Design Target.

Release to Preliminary Data Sheet.

1.1. Replace Design Target to Preliminary

Release to final Data Sheet.

2.1. Delete Preliminary

Update D.C and A.C parameters.

3.1. Update D.C parameters

3.2. Update A.C parameters

Update D.C and A.C parameters and add 300mil-SOJ PKG.

4. 1. Add 32-Pin 300mil-SOJ Package.

4. 2. Update D.C and A.C parameters.

4.3. Add the test condition for Voh1 with Vcc=5V

±5% at 25°C

4.4. Add timing diagram to define tWP1 as

″(Timing Wave Form of

Write Cycle(OE=Low Fixed)

″

5.1. Delete 17ns Part

5.2. Delete 32-SOJ-300 Package

Items

Previous spec.

(15/17/20ns part)

Updated spec.

(15/17/20ns part)

Icc

190/180/170mA

165/165/160mA

Isb

30mA

25mA

Isb1

10mA

8mA

Items

Previous spec.

(15/17/20ns part)

Updated spec.

(15/17/20ns part)

12/12/13ns

10/11/12ns

12/12/13ns

10/11/12ns

12/12/13ns

10/11/12ns

8/9/10ns

7/8/9ns

Items

Previous spec.

(15/17/20ns part)

Updated spec.

(15/17/20ns part)

Icc

165/165/160mA

125/125/120mA

3/4/5ns

3/3/3ns

Draft Data

Jan. 18th, 1995

Apr. 22th, 1995

Feb. 29th, 1996

Jul. 16th, 1996

Jun. 2nd, 1997

Feb. 25th, 1998