 |
전자부품 데이터시트 검색엔진 |
|
|
전자부품 데이터시트 검색엔진 |
|
CSD17579Q3AT 데이터시트(PDF) 3 Page - Texas Instruments |
|
|
||||||||||||||||||||||||||||||
CSD17579Q3AT 데이터시트(HTML) 3 Page - Texas Instruments |
|
|
3 / 13 page  CSD17579Q3A www.ti.com SLPS527A – SEPTEMBER 2014 – REVISED JANUARY 2016 5 Specifications 5.1 Electrical Characteristics (TA = 25°C unless otherwise stated) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT STATIC CHARACTERISTICS BVDSS Drain-to-source voltage VGS = 0 V, ID = 250 μA 30 V IDSS Drain-to-source leakage current VGS = 0 V, VDS = 24 V 1 μA IGSS Gate-to-source leakage current VDS = 0 V, VGS = 20 V 100 nA VGS(th) Gate-to-source threshold voltage VDS = VGS, ID = 250 μA 1.1 1.5 1.9 V VGS = 4.5 V, ID = 8 A 11.8 14.2 m Ω RDS(on) Drain-to-source on-resistance VGS = 10 V, ID = 8 A 8.7 10.2 m Ω gfs Transconductance VDS = 3 V, ID = 8 A 37 S DYNAMIC CHARACTERISTICS Ciss Input capacitance 768 998 pF Coss Output capacitance VGS = 0 V, VDS = 15 V, ƒ = 1 MHz 93 121 pF Crss Reverse transfer capacitance 38 49 pF RG Series gate resistance 1.9 3.8 Ω Qg Gate charge total (4.5 V) 5.3 6.9 nC Qg Gate charge total (10 V) 11.5 15.0 nC Qgd Gate charge gate-to-drain VDS = 15 V, ID = 8 A 1.2 nC Qgs Gate charge gate-to-source 2.2 nC Qg(th) Gate charge at Vth 1.1 nC Qoss Output charge VDS = 15 V, VGS = 0 V 3.0 nC td(on) Turn on delay time 2 ns tr Rise time 5 ns VDS = 15 V, VGS = 10 V, IDS = 8 A, RG = 0 Ω td(off) Turn off delay time 11 ns tf Fall time 1 ns DIODE CHARACTERISTICS VSD Diode forward voltage ISD = 8 A, VGS = 0 V 0.8 1.0 V Qrr Reverse recovery charge 3.4 nC VDS= 15 V, IF = 8 A, di/dt = 300 A/ μs trr Reverse recovery time 5 ns 5.2 Thermal Information (TA = 25°C unless otherwise stated) THERMAL METRIC MIN TYP MAX UNIT RθJC Junction-to-case thermal resistance (1) 5.4 °C/W RθJA Junction-to-ambient thermal resistance(1)(2) 60 °C/W (1) RθJC is determined with the device mounted on a 1 inch 2 (6.45 cm2), 2 oz. (0.071 mm thick) Cu pad on a 1.5 inch × 1.5 inch (3.81 cm × 3.81 cm), 0.06 inch (1.52 mm) thick FR4 PCB. RθJC is specified by design, whereas RθJA is determined by the user’s board design. (2) Device mounted on FR4 material with 1 inch2 (6.45 cm2), 2 oz. (0.071 mm thick) Cu. Copyright © 2014–2016, Texas Instruments Incorporated Submit Documentation Feedback 3 Product Folder Links: CSD17579Q3A |
유사한 부품 번호 - CSD17579Q3AT |
|
유사한 설명 - CSD17579Q3AT |
|
|
|
링크 URL |
| 개인정보취급방침 |
| ALLDATASHEET.CO.KR |
| ALLDATASHEET 가 귀하에 도움이 되셨나요? [ DONATE ] |
Alldatasheet는? | 광고문의 | 운영자에게 연락하기 | 개인정보취급방침 | 링크교환 | 제조사별 검색 All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
Korean ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
