CDBS120-HF Thru. CDBS160-HF

Forward current: 1.0A

Reverse voltage: 20 to 60V

RoHS Device

QW-JB059

Page 1

REV:A

Features

-Low power loss, High efficiency.

-High current capability, low VF

Mechanical Data

-Polarity: Laser cathode band marking.

-Weight: 0.005 grams (approx).

.

Parameter

Unit

Repetitive peak reverse voltage

Average forward current

Peak forward surge current

Operating junction temperature range

Storage temperature

Symbol

CDBS120-HF

CDBS140-HF

CDBS160-HF

20

40

1

10

-55 to +125

-55 ~ +150

60

V

A

A

°C

°C

Parameter

Unit

Reverse peak reverse current (Note1)

Forward voltage (Note1)

Symbol

Typ.

Max.

mA

V

ºC/W

Conditions

CDBS120-HF

CDBS140-HF

Junction to lead (Note 2)

0.20

0.32

0.39

0.42

0.33

0.40

0.47

Comchip Technology CO., LTD.

SMD Schottky Barrier Diode

@8.3ms single half sine-wave

-55 to +150

CDBS160-HF

Min.

0.45

0.50

0.38

0.50

0.62

0.65

Type

Junction capacitance

pF

Cj

0.028

28

115

Thermal resistance

Junction to ambient (Note 2)

120

ºC/W

Notes: (1) Pulse test width pw=300usec, 1% duty cycle.

(2) Mounted on P.C. board with 0.2*0.2”(5.0*5.0mm) copper pad areas.

Halogen Free

-Plastic package has underwriters laboratory

flammability classification 94V-0.

-Case: Packed with FRP substrate and

epoxy underfilled.

-Terminals: Pure Tin plated (Lead-Free),solderable

per MIL-STD-750, method 2026.

Dimensions in inches and (millimeter)

0805

0.040(1.00)

Typ.

R 0.011(0.275)

0.055 (1.40)

0.083 (2.10)

0.075 (1.90)

0.039 (1.00)

0.028 (0.70)

0.022(0.55)

0.014(0.35)

0.022 (0.55)

0.014 (0.35)

0.047 (1.20)

Company reserves the right to improve product design , functions and reliability without notice.

Circuit diagram

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