TLP363J

2014-09-01

2

Characteristic

Symbol

Rating

Unit

Forward current

50

mA

Forward current derating (Ta ≥ 53°C)

−0.7

mA /°C

Peak forward current (100 μs pulse, 100 pps)

1

A

Reverse voltage

5

V

Junction temperature

125

°C

Input power dissipation

72

mW

Off-state output terminal voltage

600

V

On-state RMS current

Ta = 25°C

100

mA

Ta = 70°C

50

On-state current derating (Ta ≥ 25°C)

-1.1

mA /°C

Peak on-state current (100 μs pulse, 120 pps)

2

A

Peak non-repetitive surge current (Pw =10 ms)

1.2

A

Junction temperature

115

°C

Output power dissipation

Po

300

mW

Storage temperature range

−55 to 125

°C

Operating temperature range

−40 to 100

°C

Lead soldering temperature (10 s)

260

°C

Isolation voltage (AC,1 minute, R.H. ≤ 60%)

(Note 1)

5000

Vrms

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if

the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

(Note 1): Pins 1 and 2 are shorted together and pins 3 and 4 are shorted together.

Recommended Operating Conditions

Characteristic

Symbol

Min

Typ.

Max

Unit

Supply voltage

—

—

240

Forward current

15

20

25

mA

Peak on-state current

—

—

1

A

Operating temperature

−25

—

85

°C

Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the

device. Additionally, each item is an independent guideline respectively. In developing designs using this

product, please confirm specified characteristics shown in this document.