TLP591B

2014-09-01

1

TOSHIBA Photocoupler GaAℓAs Ired & Photo

−Diode Array

TLP591B

Telecommunications

Programmable Controllers

MOS Gate Drivers

MOSFET Gate Drivers

The TOSHIBA TLP591B consists of an aluminum gallium arsenide

infrared emitting diode optically coupled to a series-connected

photo−diode array in a six-lead plastic DIP package.

The TLP591B is suitable for MOS FET gate drivers.

The TLP591B has an internal shunt resistor to optimize switching speed.

• UL recognized: UL1577, file no. E67349

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in temperature,

etc.) may cause this product to decrease in the reliability significantly

even if the operating conditions (i.e. operating

temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba

Semiconductor Reliability Handbook (“Handling Precautions”/“Derating

Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

(Note 1) Device considered a two terminal device: Pins 1, 2 and 3 shorted

together, and pins 4 and 6 shorted together.

Pin Configuration (top view)

Unit: mm

TOSHIBA

11−7A9

Weight: 0.39 g (typ.)

Characteristic

Symbol

Rating

Unit

Forward current

50

mA

Forward current derating

(Ta ≥ 25°C)

−0.5

mA /°C

Pulse forward current

(100 μs pulse, 100 pps)

1

A

Reverse voltage

3

V

Junction temperature

125

°C

Forward current

50

μA

Reverse voltage

10

V

Junction temperature

125

°C

Storage temperature range

−55 to 125

°C

Operating temperature range

−40 to 85

°C

Lead soldering temperature (10 sec.)

260

°C

Isolation voltage

(AC, 1 minute, R.H. ≤ 60%)

(Note 1)

2500

1. : Anode(LED)

2. : Cathode(LED)

3. : NC

4. : Cathode

6. : Anode

1

2

4

6

3

Start of commercial production

1990/11