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1SV322 데이터시트(PDF) 1 Page - Toshiba Semiconductor

부품명 1SV322
상세설명  TOSHIBA Diode Silicon Epitaxial Planar Type
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제조업체  TOSHIBA [Toshiba Semiconductor]
홈페이지  http://www.semicon.toshiba.co.jp/eng
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1SV322 데이터시트(HTML) 1 Page - Toshiba Semiconductor

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1SV322
2014-03-01
1
TOSHIBA Diode Silicon Epitaxial Planar Type
1SV322
TCXO/VCO
• High capacitance ratio: C1V / C4V = 4.3 (typ.)
• Low series resistance: rs = 0.4 Ω (typ.)
• Useful for small size tuner.
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Reverse voltage
VR
10
V
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
−55 to 125
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Reverse voltage
VR
IR = 1 μA
10
V
Reverse current
IR
VR = 10 V
3
nA
Capacitance
C1V
VR = 1 V, f = 1 MHz
26.5
29.5
pF
Capacitance
C4V
VR = 4 V, f = 1 MHz
6.0
7.1
pF
Capacitance ratio
C1V / C4V
4.0
4.3
Series resistance
rs
VR = 4 V, f = 100 MHz
0.4
0.8
Ω
Note: Signal level when capacitance is measured: Vsig = 500 mVrms
Marking
Unit: mm
JEDEC
JEITA
TOSHIBA
1-1E1A
Weight: 0.004 g (typ.)
Start of commercial production
1999-03


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