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1SV324 데이터시트(PDF) 1 Page - Toshiba Semiconductor |
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1SV324 데이터시트(HTML) 1 Page - Toshiba Semiconductor |
1 / 3 page 1SV324 2014-03-01 1 TOSHIBA Diode Silicon Epitaxial Planar Type 1SV324 TCXO/VCO • High capacitance ratio: C1V / C4V = 4.3 (typ.) • Low series resistance: rs = 0.4 Ω (typ.) • Useful for small size tuner. Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Reverse voltage VR 10 V Junction temperature Tj 125 °C Storage temperature range Tstg −55 to 125 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Reverse voltage VR IR = 1 μA 10 ⎯ ⎯ V Reverse current IR VR = 10 V ⎯ ⎯ 3 nA Capacitance C1V VR = 1 V, f = 1 MHz 44 ⎯ 49.5 pF Capacitance C4V VR = 4 V, f = 1 MHz 9.2 ⎯ 12 pF Capacitance ratio C1V / C4V ⎯ 4 4.3 ⎯ ⎯ Series resistance rs VR = 4 V, f = 100 MHz ⎯ 0.4 0.8 Ω Note: Signal level when capacitance is measured: Vsig = 500 mVrms Marking Unit: mm JEDEC ― JEITA ― TOSHIBA 1-1E1A Weight: 0.004 g (typ.) Start of commercial production 1999-02 |
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