42

01.11.2003

1.1

0.4

1

2

3

Type

Code

1.9

BCW 65, BCW 66

General Purpose Transistors

NPN

Surface mount Si-Epitaxial PlanarTransistors

Si-Epitaxial PlanarTransistoren für die Oberflächenmontage

NPN

Power dissipation – Verlustleistung

250 mW

Plastic case

SOT-23

Kunststoffgehäuse

(TO-236)

Weight approx. – Gewicht ca.

0.01 g

Plastic material has UL classification 94V-0

Gehäusematerial UL94V-0 klassifiziert

Dimensions / Maße in mm

1 = B

2 = E

3 = C

Standard packaging taped and reeled

Standard Lieferform gegurtet auf Rolle

Maximum ratings (T

Grenzwerte (T

BCW 65

BCW 66

Collector-Emitter-voltage

B open

V

CE0

32 V

45 V

Collector-Base-voltage

E open

V

CB0

60 V

75 V

Emitter-Base-voltage

C open

V

EB0

5 V

Power dissipation – Verlustleistung

P

tot

Collector current – Kollektorstrom (DC)

I

C

800 mA

Peak Collector current – Kollektor-Spitzenstrom

I

CM

1000 mA

Base current – Basis-Spitzenstrom

I

B

100 mA

Peak Base current – Basis-Spitzenstrom

I

BM

200 mA

Junction temperature – Sperrschichttemperatur

T

j

150

Storage temperature – Lagerungstemperatur

T

S

- 65…+ 150

Characteristics (T

Kennwerte (T

Min.

Typ.

Max.

Collector-Base cutoff current – Kollektorreststrom

I

BCW 65

I

CB0

–

–

20 nA

I

CB0

–

–

20

I

BCW 66

I

CB0

–

–

20 nA

I

CB0

–

–

20

Emitter-Base cutoff current – Emitterreststrom

I

I

EB0

–

–

20 nA