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CDBD835L ๋ฐ์ดํ„ฐ์‹œํŠธ(HTML) 1 Page - Comchip Technology

๋ถ€ํ’ˆ๋ช… CDBD835L
์ƒ์„ธ๋‚ด์šฉ  SMD Schottky Barrier Rectifier
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์ œ์กฐ์‚ฌ  COMCHIP [Comchip Technology]
ํ™ˆํŽ˜์ด์ง€  http://www.comchiptech.com
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CDBD835L ๋ฐ์ดํ„ฐ์‹œํŠธ(HTML) 1 Page - Comchip Technology

   
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Reverse Voltage: 35 Volts
Forward Current: 8.0 Amp
CDBD835L
Features
Lead formed for surface mount
Easy pick and place
Plastic package has Underwriters Lab.
flammability classification 94V-0
Low Switching Noise
Low forward voltage drop
Mechanical data
Case: TO-252AA molded plastic
Terminals: solderable per MIL-STD-750,
method 2026
Mounting position: Any
Approx. Weight: 0.295 gram
SMD Schottky Barrier Rectifier
SMD Schottky Barrier Rectifier
www.comchip.com.tw
COMCHIP
COMCHIP
Maximum Ratings and Electrical Characterics
MDS0211012A
Page 1
Parameter
Max.Repetitive Peak Reverse Voltage
Max. DC Blocking Voltage
Max. RMS Voltage
Peak Surge Forward Current
8.3ms single half sine-wave
superimposed on rate load
( JEDEC method )
Average Rectifier Forward Current (Note 1)
Peak Repetitive Foward Current (at Rated VR,
Square Wave, 20KHz, Tc=80 C)
Max. Instantaneous Forward Current at 8.0 A (Note 2)
Max. DC Reverse Current at Rated DC Blocking
Voltage
Ta=25
Ta=100
Max. Thermal Resistance (Note 3)
Operating Junction temperature
Storage Temperature
Symbol
VRRM
VDC
VRMS
IFSM
IF(AV)
IFRM
V F
I R
R JA
R JC
T j
TSTG
Unit
V
V
V
A
A
A
V
A
C/W
Note 1. Total deviceRated Vp at Tc=100 C
2. Pulse width = 300uS, duty cycle less than 2%.
3. Thermal resistance from junction to ambient and junction to case mounted on minimum pad size recommended
CDBD835
35
35
24.5
75
8.0
0.5
-65 to +125
80
6.0
1.4
-65 to +150
35
C
C
A
5.40
5.60
B
6.30
6.70
C
2.20
2.40
D
5.20
5.50
E
8.00
10.00
F
6.60
7.00
G
2.40
3.00
H
0.90
1.50
I
0.45
0.55
J
0.45
0.60
K
0.90
1.50
L
0.70
0.90
M
0.50
0.70
N
0.60
0.90
P
2.70
3.10
Q
5.00
5.40
S
4.80
5.20
T
2.30
V
1.20
1.40
X
0.80
1.20
DIM
Min.
Max.
Unit: Millmeters
TO-252AA (D-PAK)
2
16
C
C


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